Kit man cham (27 resultados)
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Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book is concerned with the use of Computer-Aided Design (CAD) in the device and process development of Very-Large-Scale-Integrated Circuits (VLSI). The emphasis is in Metal-Oxide-Semiconductor (MOS) technology. State-of-the-art device and proc…ess development are presented. This book is intended as a reference for engineers involved in VLSI develop ment who have to solve many device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simula tion system, and also presents many case studies where the user applies the CAD tools in different situations. This book is also intended as a text or reference for graduate students in the field of integrated circuit fabrication. Major areas of device physics and processing are described and illustrated with Simulations. The material in this book is a result of several years of work on the implemen tation of the simulation system, the refinement of physical models in the simulation programs, and the application of the programs to many cases of device developments. The text began as publications in journals and con ference proceedings, as weil as lecture notes for a Hewlett-Packard internal CAD course. This book consists of two parts. It begins with an overview of the status of CAD in VLSI, which pointsout why CAD is essential in VLSI development. Part A presents the organization of the two-dimensional simulation system.
Computer-Aided Design and VLSI Device Development
Kit Man Cham; Soo-Young Oh; Moll, John L.; Keunmyung Lee; Vandevoorde, Paul
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Librería: Basi6 International, Irving, TX, Estados Unidos de AmericaBasi6 International
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EUR 136,22
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Computer-Aided Design and VLSI Device Development
Kit Man Cham, Kit Man; Soo-Young Oh; Moll, John L.; Keunmyung Lee; Vandevoorde, Paul
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Librería: Mispah books, Redhill, SURRE, Reino UnidoMispah books
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EUR 119,23
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Paperback. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Computer-Aided Design and VLSI Device Development (The Springer International Series in Engineering and Computer Science)
Kit Man Cham, Kit Man; Soo-Young Oh; Moll, John L.; Keunmyung Lee; Vandevoorde, Paul
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Librería: Ria Christie Collections, Uxbridge, Reino UnidoRia Christie Collections
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Computer-Aided Design and VLSI Device Development (The Springer International Series in Engineering and Computer Science, 53)
Kit Man Cham; Soo-Young Oh; Moll, John L.; Keunmyung Lee; Vandevoorde, Paul
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Librería: AHA-BUCH GmbH, Einbeck, AlemaniaAHA-BUCH GmbH
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EUR 168,73
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Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic si…mulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs.
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Librería: AHA-BUCH GmbH, Einbeck, AlemaniaAHA-BUCH GmbH
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EUR 168,73
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Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulatio…n programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs.
Computer-Aided Design and VLSI Device Development (The Springer International Series in Engineering and Computer Science, 53)
Kit Man Cham, Soo-Young Oh, Moll, John L., Keunmyung Lee, Va
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Librería: Mispah books, Redhill, SURRE, Reino UnidoMispah books
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Hardcover. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Computer-Aided Design and VLSI Device Development (The Springer International Series in Engineering and Computer Science, 53)
Kit Man Cham, Soo-Young Oh, Moll, John L., Keunmyung Lee, Va
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Librería: Mispah books, Redhill, SURRE, Reino UnidoMispah books
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EUR 258,94
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Paperback. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
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Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.
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EUR 53,49
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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book is concerned with the use of Computer-Aided Design (CAD) in the device and process development of Very-Large-Scale-Integrated Circuits (VLSI). The emphasis is in Metal-Oxide-Semiconductor (MOS) technology. State-of-the-art… device and process development are presented. This book is intended as a reference for engineers involved in VLSI develop ment who have to solve many device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simula tion system, and also presents many case studies where the user applies the CAD tools in different situations. This book is also intended as a text or reference for graduate students in the field of integrated circuit fabrication. Major areas of device physics and processing are described and illustrated with Simulations. The material in this book is a result of several years of work on the implemen tation of the simulation system, the refinement of physical models in the simulation programs, and the application of the programs to many cases of device developments. The text began as publications in journals and con ference proceedings, as weil as lecture notes for a Hewlett-Packard internal CAD course. This book consists of two parts. It begins with an overview of the status of CAD in VLSI, which pointsout why CAD is essential in VLSI development. Part A presents the organization of the two-dimensional simulation system. 332 pp. Englisch.
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Librería: THE SAINT BOOKSTORE, Southport, Reino UnidoTHE SAINT BOOKSTORE
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Paperback / softback. Condición: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.
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Librería: moluna, Greven, Alemaniamoluna
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EUR 48,37
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Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book is concerned with the use of Computer-Aided Design (CAD) in the device and process development of Very-Large-Scale-Integrated Circuits (VLSI). The emphasis is in Metal-Oxide-Semiconductor (MOS) technology. S…tate-of-the-art device and process devel.
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Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000
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EUR 53,49
Envío por EUR 60,00Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 1 disponibles
Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book is concerned with the use of Computer-Aided Design (CAD) in the device and process development of Very-Large-Scale-Integrated Circuits (VLSI). The emphasis is in Metal-Oxide-Semiconductor (MOS) technology. State-of-the-art dev…ice and process development are presented. This book is intended as a reference for engineers involved in VLSI develop ment who have to solve many device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simula tion system, and also presents many case studies where the user applies the CAD tools in different situations. This book is also intended as a text or reference for graduate students in the field of integrated circuit fabrication. Major areas of device physics and processing are described and illustrated with Simulations. The material in this book is a result of several years of work on the implemen tation of the simulation system, the refinement of physical models in the simulation programs, and the application of the programs to many cases of device developments. The text began as publications in journals and con ference proceedings, as weil as lecture notes for a Hewlett-Packard internal CAD course. This book consists of two parts. It begins with an overview of the status of CAD in VLSI, which pointsout why CAD is essential in VLSI development. Part A presents the organization of the two-dimensional simulation system.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 332 pp. Englisch.
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Taschenbuch. Condición: Neu. Computer-Aided Design and VLSI Device Development | Kit Man Cham (u. a.) | Taschenbuch | The Springer International Series in Engineering and Computer Science | xiii | Englisch | 2012 | Humana | EAN 9781461296058 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heid…elberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.
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Librería: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand
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Condición: new. Questo è un articolo print on demand.
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EUR 160,49
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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of…the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs. 396 pp. Englisch.
Computer-Aided Design and VLSI Device Development
Kit Man Cham|Soo-Young Oh|John L. Moll|Keunmyung Lee|Paul Vandevoorde
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EUR 136,16
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Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with th…e exception of the parasitic simulation .
Computer-Aided Design and VLSI Device Development
Kit Man Cham|Soo-Young Oh|John L. Moll|Keunmyung Lee|Paul Vandevoorde
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Librería: moluna, Greven, Alemaniamoluna
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Gebunden. Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domai…n (with the exception of the parasitic simulation .
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Taschenbuch. Condición: Neu. Computer-Aided Design and VLSI Device Development | Kit Man Cham (u. a.) | Taschenbuch | xiv | Englisch | 2011 | Springer | EAN 9781461289562 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Pri…nt on Demand.
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EUR 160,49
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Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the…parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 396 pp. Englisch.
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EUR 160,49
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Buch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasit…ic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 398 pp. Englisch.
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Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.
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EUR 245,03
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Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the par…asitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs. 398 pp. Englisch.
