Hasan rokib (5 resultados)
- Tapa blanda
Librería: Revaluation Books, Exeter, Reino UnidoRevaluation Books
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 66,22
Envío por EUR 11,73Se envía de Reino Unido a Estados Unidos de AmericaCantidad disponible: 1 disponibles
Paperback. Condición: Brand New. 68 pages. 8.66x5.91x0.16 inches. In Stock.
- Tapa blanda
Librería: Mispah books, Redhill, SURRE, Reino UnidoMispah books
Contactar con el vendedorVendedor de 4 estrellasCondición: Nuevo
EUR 135,28
Envío por EUR 29,32Se envía de Reino Unido a Estados Unidos de AmericaCantidad disponible: 1 disponibles
paperback. Condición: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
- Tapa blanda
- Impresión bajo demanda
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 35,90
Envío por EUR 23,00Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 2 disponibles
Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -GaN based double gate (DG) metal oxide semiconductor field effect transistors (MOSFETs) with a gate length of 10 nm have been designed for the next generation logic applications. The sub-threshold slope (SS) and drain induced barrie…r lowering (DIBL) are 66.5 mV/decade and 30 mV/V, respectively. The length of gate underlap is varied from 1 to 4 nm. The underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. To improve the figure of merits of the proposed device, source to gate (S-G) and gate to drain (G-D) distances are varied which is mentioned as underlap. The lengths are maintained equal for both sides of the gate.The length of gate underlap is varied from 1 to 4 nm. The underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. Therefore, the proposed GaN based DG MOSFETs shows excellent promise as one of the candidates to substitute currently used MOSFETs for future high speed applications. 68 pp. Englisch.
- Tapa blanda
- Impresión bajo demanda
Librería: moluna, Greven, Alemaniamoluna
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 31,27
Envío por EUR 48,99Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: Más de 20 disponibles
Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Hasan Md. RokibI am Md. Rokib Hasan. My home town is Mymensingh, Bangladesh. I have completed my B.Sc. in Electrical and Electronics Engineering from American International University- Bangladesh (AIUB)….I was nominated as a General S.
- Tapa blanda
- Impresión bajo demanda
Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 35,90
Envío por EUR 60,00Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 1 disponibles
Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -GaN based double gate (DG) metal oxide semiconductor field effect transistors (MOSFETs) with a gate length of 10 nm have been designed for the next generation logic applications. The sub-threshold slope (SS) and drain induced barrier lo…wering (DIBL) are 66.5 mV/decade and 30 mV/V, respectively. The length of gate underlap is varied from 1 to 4 nm. The underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. To improve the figure of merits of the proposed device, source to gate (S-G) and gate to drain (G-D) distances are varied which is mentioned as underlap. The lengths are maintained equal for both sides of the gate.The length of gate underlap is varied from 1 to 4 nm. The underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. Therefore, the proposed GaN based DG MOSFETs shows excellent promise as one of the candidates to substitute currently used MOSFETs for future high speed applications.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 68 pp. Englisch.
