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Publicado por Springer- Verlag, Berlin, 1991
ISBN 10: 3540509720 ISBN 13: 9783540509721
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Publicado por Cambridge : Cambridge University Press, 1993
ISBN 10: 0521384702 ISBN 13: 9780521384704
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Añadir al carritoFirst Edition. Fine cloth copy in an equally fine dust-wrapper. Particularly well-preserved overall; tight, bright, clean and especially sharp-cornered. Physical description; x, 267 pages). Notes; Includes bibliographical references and index. Translated from the Russian. Subjects; Fridman, A. A. (Aleksanr Aleksandrovich) 1888-1925. Cosmology. Astrophysicists Soviet Union ; Biography. Physicists Soviet Union ; Biography. Astrophysics. Biography. 3 Kg.
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Publicado por Cambridge : Cambridge University Press, 1993
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Añadir al carritoFirst Edition. Fine cloth copy in an equally fine dust-wrapper. Particularly well-preserved overall; tight, bright, clean and especially sharp-cornered. Physical description; x, 267 pages). Notes; Includes bibliographical references and index. Translated from the Russian. Subjects; Fridman, A. A. (Aleksanr Aleksandrovich) 1888-1925. Cosmology. Astrophysicists Soviet Union ; Biography. Physicists Soviet Union ; Biography. Astrophysics. Biography. 1 Kg.
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Añadir al carritoTaschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - I am happy indeed to write a foreword to this book. Since it was founded, the A. F. Ioffe Institute in Leningrad has been in the forefront of semiconductor research. I visited it in 1934, and vividly remember A . F. Ioffe himself and J. Frenkel and their kindness to me, and to others attending the meeting to celebrate the hundredth anniversary of Mendeleev. In the last years my own work on non-crystalline semiconductors has been strongly influenced by the work of B. T. Kolomiets and his co-workers. The English-speaking world should know the great Institute better, and this book will, I am sure, help this to happen. Nevill Mott Cambridge, June 1985 v Contents INTRODUCTORY PART Abram Fyodorovich Ioffe (29th October 1880 - 14th October 1960) 3 V. M. Tuchkevich and V. Ya. Frenkel Semiconductors: A New Material for Electrical Engineering 11 A. F. Ioffe EXPERIMENTAL PART Photovoltaic Solar Energy Conversion 19 Zh. 1. Alferov New Optical Methods in Semiconductor Research 37 B. P. Zakharchenya Reemission, Quantum Efficiency and Lifetimes of Radiative Recombination in A3BS Semiconductors and Heterostructures 53 D. Z. Garbuzov Interacting Excitons in Germanium and Silicon 87 P. D. Altukhov, V. M. Asnin and A. A. Rogachev Liquid Semiconductors 129 A. R. Regel and A. A. Andreev Chalcogenide Vitreous Semiconductors 143 B. T. Kolomiets, E. A. Lebedev, V. M. Lyubin, T. F. Mazets and T. N. Mamontova vii viii CONTENTS Electron and Hole Recombination in Narrow Gap Semiconductors 169 B. L. Gelmont and V. I.
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Añadir al carritoTaschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -I am happy indeed to write a foreword to this book. Since it was founded, the A. F. Ioffe Institute in Leningrad has been in the forefront of semiconductor research. I visited it in 1934, and vividly remember A . F. Ioffe himself and J. Frenkel and their kindness to me, and to others attending the meeting to celebrate the hundredth anniversary of Mendeleev. In the last years my own work on non-crystalline semiconductors has been strongly influenced by the work of B. T. Kolomiets and his co-workers. The English-speaking world should know the great Institute better, and this book will, I am sure, help this to happen. Nevill Mott Cambridge, June 1985 v Contents INTRODUCTORY PART Abram Fyodorovich Ioffe (29th October 1880 - 14th October 1960) 3 V. M. Tuchkevich and V. Ya. Frenkel Semiconductors: A New Material for Electrical Engineering 11 A. F. Ioffe EXPERIMENTAL PART Photovoltaic Solar Energy Conversion 19 Zh. 1. Alferov New Optical Methods in Semiconductor Research 37 B. P. Zakharchenya Reemission, Quantum Efficiency and Lifetimes of Radiative Recombination in A3BS Semiconductors and Heterostructures 53 D. Z. Garbuzov Interacting Excitons in Germanium and Silicon 87 P. D. Altukhov, V. M. Asnin and A. A. Rogachev Liquid Semiconductors 129 A. R. Regel and A. A. Andreev Chalcogenide Vitreous Semiconductors 143 B. T. Kolomiets, E. A. Lebedev, V. M. Lyubin, T. F. Mazets and T. N. Mamontova vii viii CONTENTS Electron and Hole Recombination in Narrow Gap Semiconductors 169 B. L. Gelmont and V. I. 552 pp. Englisch.
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Publicado por Springer-Verlag New York Inc., 2012
ISBN 10: 1461578426 ISBN 13: 9781461578420
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Añadir al carritoCondición: New. Print on Demand pp. 552 66:B&W 7 x 10 in or 254 x 178 mm Perfect Bound on White w/Gloss Lam.
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Añadir al carritoTaschenbuch. Condición: Neu. Semiconductor Physics | V. Ya. Frenkel (u. a.) | Taschenbuch | 562 S. | Englisch | 2012 | Springer | EAN 9781461578420 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.
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Publicado por Springer, Springer Nov 2012, 2012
ISBN 10: 1461578426 ISBN 13: 9781461578420
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Añadir al carritoTaschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Introductory Part.- Abram Fyodorovich Ioffe (29th October 1880 - 14th October 1960).- Semiconductors: A New Material for Electrical Engineering.- Experimental Part.- Photovoltaic Solar Energy Conversion.- New Optical Methods in Semiconductor Research.- Reemission, Quantum Efficiency and Lifetimes of Radiative Recombination in A3B5 Semiconductors and Heterostructures.- Interacting Excitons in Germanium and Silicon.- Liquid Semiconductors.- Chalcogenide Vitreous Semiconductors.- Electron and Hole Recombination in Narrow Gap Semiconductors.- Optical Cooling of the Nuclear Spin System in a Semiconductor.- Hot Photoluminescence in GaAs Crystals.- The Photon Drag of Electrons in Semiconductors.- A Study of the Metal-Semiconductor Transition in Vanadium Oxides.- New Methods of Fast High Power Switching with Semiconductor Devices.- Theoretical Part.- A Theory of Thermomagnetic Phenomena in Semiconductors in a Quantizing Magnetic Field.- The Mutual Drag of Electrons and Electromagnetic Waves.- Dielectric Losses in Crystals.- Impurity Band and Related Phenomena in Doped Semiconductors.- Light Scattering from Heavily Doped Semiconductors.- Photogalvanic Effects in Noncentrosymmetric Crystals.- Strong Local Interelectron Attraction and 'Critical' Potentials in Semiconductors and Insulators.- Urbach's Rule in the Molecular Model of Amorphous Semiconductors.- The Capacity of an Abrupt Asymmetric p-n Junction.- Carrier Capture by Attraction Centers in Semiconductors.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 552 pp. Englisch.
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Añadir al carritoCondición: New. PRINT ON DEMAND pp. 552.