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Heterostructure Epitaxy and Devices: 11 (NATO Science Partnership Subseries: 3) - Tapa blanda

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9789401065931: Heterostructure Epitaxy and Devices: 11 (NATO Science Partnership Subseries: 3)
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ISBN 10: 9401065934 ISBN 13: 9789401065931
Editorial: Springer, 2014

Sinopsis

From October 15 to 19, 1995 a Workshop on Hetero structureEpitaxyandDeviceswasheldatSmoleniceCastlenear Slovakia’scapital Bratislava. The intention ofthisWorkshop was toestablishandstrengthentiesbetweenscientistsoftheformerly Socialist East and Middle-European states with their colleagues fromtheWesterncountries. WiththisaimtheWorkshopfoundthe financialsupportbyNATOwhichtremendouslyhelpedtofacilitate organizingthemeeting That the Workshop was also a scientific success is evidenced by the present volume comprising a selection of the contributed papers. We are confident that the reader of these Proceedings can convincehimselfofthe highqualityofthe work whose results are presented here. We hope that this and the numerousdiscussionsbetweenthe participants ofthe Workshop will promote cooperations among scientists from the countries representedatthemeeting. It is a pleasure to express our gratitude to NATO and, as representatives ofthe institutions involved in the organization, to Lubomir Malacky (Institute of Electrical Engineering, Slovak Academy of Sciences) and Hergo-Heinrich Wehmann (Institute for Semiconductor Technology, Technical University Braun schweig) whose dedicated work was most essential for the Workshop. A. Schlachetzki J. Novak November1995 xiii SIMULATIONOFIII-VLAYERGROWTH y. ARIMA DepartmentofPhysics, Gakushuin University 1-5-1 Mejiro, Toshima-ku, Tokyo 171, Japan AND T. IRISAWA ComputerCenter, Gakushuin University 1-5-1 Mejiro, Toshima-ku, Tokyo 171, Japan 1. Introduction Since it was reported [1] that the intensities of RHEED for the growing surface of aGaAs crystal in the process of MBE oscillate with a period correspondingto the completion of a monolayer, this phenomenon has been applied to the thin layer growth of man-made superlattices.

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Reseña del editor

From October 15 to 19, 1995 a Workshop on Hetero­ structureEpitaxyandDeviceswasheldatSmoleniceCastlenear Slovakia'scapital Bratislava. The intention ofthisWorkshop was toestablishandstrengthentiesbetweenscientistsoftheformerly Socialist East and Middle-European states with their colleagues fromtheWesterncountries. WiththisaimtheWorkshopfoundthe financialsupportbyNATOwhichtremendouslyhelpedtofacilitate organizingthemeeting That the Workshop was also a scientific success is evidenced by the present volume comprising a selection of the contributed papers. We are confident that the reader of these Proceedings can convincehimselfofthe highqualityofthe work whose results are presented here. We hope that this and the numerousdiscussionsbetweenthe participants ofthe Workshop will promote cooperations among scientists from the countries representedatthemeeting. It is a pleasure to express our gratitude to NATO and, as representatives ofthe institutions involved in the organization, to Lubomir Malacky (Institute of Electrical Engineering, Slovak Academy of Sciences) and Hergo-Heinrich Wehmann (Institute for Semiconductor Technology, Technical University Braun­ schweig) whose dedicated work was most essential for the Workshop. A. Schlachetzki J. Novak November1995 xiii SIMULATIONOFIII-VLAYERGROWTH y. ARIMA DepartmentofPhysics, Gakushuin University 1-5-1 Mejiro, Toshima-ku, Tokyo 171, Japan AND T. IRISAWA ComputerCenter, Gakushuin University 1-5-1 Mejiro, Toshima-ku, Tokyo 171, Japan 1. Introduction Since it was reported [1] that the intensities of RHEED for the growing surface of aGaAs crystal in the process of MBE oscillate with a period correspondingto the completion of a monolayer, this phenomenon has been applied to the thin layer growth of man-made superlattices.

"Sobre este título" puede pertenecer a otra edición de este libro.

Editorial
Springer
Año de publicación
2014
Idioma
Inglés
ISBN 10 
9401065934
ISBN 13 
9789401065931
Encuadernación
Tapa blanda
Número de páginas
340
Editor
Novák Josef, Schlachetzki A.
Contacto del fabricante
Springer Nature Customer Service Center GmbH
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