Publicado por LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Idioma: Inglés
Librería: Books Puddle, New York, NY, Estados Unidos de America
EUR 57,44
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Publicado por LAP LAMBERT Academic Publishing Mär 2019, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Idioma: Inglés
Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemania
EUR 39,90
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Añadir al carritoTaschenbuch. Condición: Neu. Neuware -The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc.Books on Demand GmbH, Überseering 33, 22297 Hamburg 60 pp. Englisch.
Publicado por LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Idioma: Inglés
Librería: Revaluation Books, Exeter, Reino Unido
EUR 70,98
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Añadir al carritoPaperback. Condición: Brand New. 60 pages. 8.66x5.91x0.14 inches. In Stock.
Publicado por LAP LAMBERT Academic Publishing Mrz 2019, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Idioma: Inglés
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
EUR 39,90
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Añadir al carritoTaschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc. 60 pp. Englisch.
Publicado por LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Idioma: Inglés
Librería: AHA-BUCH GmbH, Einbeck, Alemania
EUR 40,89
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Añadir al carritoTaschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc.
Publicado por LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Idioma: Inglés
Librería: moluna, Greven, Alemania
EUR 34,25
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Añadir al carritoCondición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Dhiman GauravGaurav Dhiman was born in Pathankot, India, in1981. He received the B.Tech. degree in Electronics and Communicationengineering from the Punjab Technical University, Jalandhar, India, in 2003,and the M.Tech. and Ph.D. deg.
Publicado por LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Idioma: Inglés
Librería: Majestic Books, Hounslow, Reino Unido
EUR 57,27
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Publicado por LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Idioma: Inglés
Librería: Biblios, Frankfurt am main, HESSE, Alemania
EUR 59,89
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