improved performance algainp leds de hsu shun cheng (9 resultados)

Soft cover. Condición: Very Good. Softcover, spine uncreased, text block clean, text unmarked, light shelf wear. Some scratches/bumping.

Condición: New. pp. 132.

Taschenbuch. Condición: Neu. Neuware -Recently, based on the significant improvement on epitaxy technique of metal organic chemical vapor deposition (MOCVD), the internal quantum efficiency of AlGaInP-based LEDs has reached near 100%. However, a significant challenge in the development of high-efficiency and high-power AlGaInP LEDs is the extraction of light emitted from the semiconductor material into the surrounding media. The main purpose of this book is to improve the light output of LEDs using various process techniques, which can help increase the light output of LEDs. In this book, we have developed several fabrication processes to improve the light output of the AlGaInP LED. First, a 1mm × 1mm AlGaInP LED sandwiched by ITO omni-directional reflector (ODR) and current-spreading layer is presented. Secondly, an AlGaInP ODR-LED with a two- dimensional ¿wavelike¿ surface was fabricated. Moreover, the heavily carbon- doped GaP contact layer has been developed for the absorbing-substrate AlGaInP LEDs using the ITO as the current-spreading layer and transparent ohmic contact.Books on Demand GmbH, Überseering 33, 22297 Hamburg 132 pp. Englisch.

Paperback. Condición: Like New. Like New. book.

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Recently, based on the significant improvement on epitaxy technique of metal organic chemical vapor deposition (MOCVD), the internal quantum efficiency of AlGaInP-based LEDs has reached near 100%. However, a significant challenge in the development of high-efficiency and high-power AlGaInP LEDs is the extraction of light emitted from the semiconductor material into the surrounding media. The main purpose of this book is to improve the light output of LEDs using various process techniques, which can help increase the light output of LEDs. In this book, we have developed several fabrication processes to improve the light output of the AlGaInP LED. First, a 1mm × 1mm AlGaInP LED sandwiched by ITO omni-directional reflector (ODR) and current-spreading layer is presented. Secondly, an AlGaInP ODR-LED with a two- dimensional wavelike surface was fabricated. Moreover, the heavily carbon- doped GaP contact layer has been developed for the absorbing-substrate AlGaInP LEDs using the ITO as the current-spreading layer and transparent ohmic contact. 132 pp. Englisch.

Condición: New. Print on Demand pp. 132 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.

Condición: New. PRINT ON DEMAND pp. 132.

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Hsu Shun-ChengShun-Cheng Hsu received Ph.D. degree in deparment of materials science and egineering from National Chung Hsing University, Taiwan, R.O.C. in 2009.Recently, based on the significant improvement on epitaxy techniq.

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Recently, based on the significant improvement on epitaxy technique of metal organic chemical vapor deposition (MOCVD), the internal quantum efficiency of AlGaInP-based LEDs has reached near 100%. However, a significant challenge in the development of high-efficiency and high-power AlGaInP LEDs is the extraction of light emitted from the semiconductor material into the surrounding media. The main purpose of this book is to improve the light output of LEDs using various process techniques, which can help increase the light output of LEDs. In this book, we have developed several fabrication processes to improve the light output of the AlGaInP LED. First, a 1mm × 1mm AlGaInP LED sandwiched by ITO omni-directional reflector (ODR) and current-spreading layer is presented. Secondly, an AlGaInP ODR-LED with a two- dimensional wavelike surface was fabricated. Moreover, the heavily carbon- doped GaP contact layer has been developed for the absorbing-substrate AlGaInP LEDs using the ITO as the current-spreading layer and transparent ohmic contact.