Improved Performance of AlGaInP LEDs Using Various Process Techniques

Shun-Cheng Hsu

ISBN 10: 3843358362 ISBN 13: 9783843358361

Editorial: VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2010

Idioma: Ingl�s

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Descripci�n

pp. 132.

N� de ref. del art�culo 26131728839

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T�tulo

Improved Performance of AlGaInP LEDs Using Various Process Techniques

Editor

VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG

Fecha de publicaci�n

2010

Idioma

Ingl�s

ISBN 10

3843358362

ISBN 13

9783843358361

Encuadernaci�n

Encuadernaci�n de tapa blanda

Estado

New

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Sinopsis

Recently, based on the significant improvement on epitaxy technique of metal organic chemical vapor deposition (MOCVD), the internal quantum efficiency of AlGaInP-based LEDs has reached near 100%. However, a significant challenge in the development of high-efficiency and high-power AlGaInP LEDs is the extraction of light emitted from the semiconductor material into the surrounding media. The main purpose of this book is to improve the light output of LEDs using various process techniques, which can help increase the light output of LEDs. In this book, we have developed several fabrication processes to improve the light output of the AlGaInP LED. First, a 1mm � 1mm AlGaInP LED sandwiched by ITO omni-directional reflector (ODR) and current-spreading layer is presented. Secondly, an AlGaInP ODR-LED with a two- dimensional ?wavelike? surface was fabricated. Moreover, the heavily carbon- doped GaP contact layer has been developed for the absorbing-substrate AlGaInP LEDs using the ITO as the current-spreading layer and transparent ohmic contact.

Rese�a del editor

Recently, based on the significant improvement on epitaxy technique of metal organic chemical vapor deposition (MOCVD), the internal quantum efficiency of AlGaInP-based LEDs has reached near 100%. However, a significant challenge in the development of high-efficiency and high-power AlGaInP LEDs is the extraction of light emitted from the semiconductor material into the surrounding media. The main purpose of this book is to improve the light output of LEDs using various process techniques, which can help increase the light output of LEDs. In this book, we have developed several fabrication processes to improve the light output of the AlGaInP LED. First, a 1mm � 1mm AlGaInP LED sandwiched by ITO omni-directional reflector (ODR) and current-spreading layer is presented. Secondly, an AlGaInP ODR-LED with a two- dimensional "wavelike" surface was fabricated. Moreover, the heavily carbon- doped GaP contact layer has been developed for the absorbing-substrate AlGaInP LEDs using the ITO as the current-spreading layer and transparent ohmic contact.

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