9783845412924 - electromigration in cu interconnects: the driving force formalism: modeling and experiment de roy, dr. arijit (9 resultados)
Idioma: Inglés
Editorial: VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
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Librería: Books Puddle, New York, NY, Estados Unidos de AmericaBooks Puddle
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Condición: New. pp. 144.
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Librería: preigu, Osnabrück, Alemaniapreigu
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Taschenbuch. Condición: Neu. Electromigration in Cu Interconnects | The Driving Force Formalism: Modeling and Experiment | Arijit Roy | Taschenbuch | 144 S. | Englisch | 2011 | LAP LAMBERT Academic Publishing | EAN 9783845412924 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück,…mail[at]preigu[dot]de | Anbieter: preigu.
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Librería: Mispah books, Redhill, SURRE, Reino UnidoMispah books
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Paperback. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
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Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This work is intended for the beginners and the advanced readers. Electromigration is VLSI/ULSI interconnection remains one of the major failure issues in microelectronics and electromigration remains an attractive research area in…last few decades. This work attempts to explore the driving force formalism of the electromigration phenomenon.The prime interest of this work is to investigate the physics of failure in submicron (down to 100 nm wide) Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. In order to develop the combined driving force model, commercial finite element analysis package is used. Plenty of experiments on Cu damascene interconnects are conducted, and extensive failure analyses are performed to investigate the root causes of electromigration failure. Good correlations between the model predictions and experiments are obtained. The future challenges on the study of electromigration are also discussed. 144 pp. Englisch.
Idioma: Inglés
Editorial: VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
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Librería: Majestic Books, Hounslow, Reino UnidoMajestic Books
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Condición: New. Print on Demand pp. 144 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.
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Librería: moluna, Greven, Alemaniamoluna
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Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Roy Dr. ArijitDr. Arijit Roy has attended many prestigious institutes like IITs, NTU (Singapore) and Infineon Technologies. He has published many research articles and contributed significantly on Elect…romigration. Presently, he is a.
Idioma: Inglés
Editorial: VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
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Librería: Biblios, frankfurt am main, HESSE, AlemaniaBiblios
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Condición: New. PRINT ON DEMAND pp. 144.
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Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000
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Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This work is intended for the beginners and the advanced readers. Electromigration is VLSI/ULSI interconnection remains one of the major failure issues in microelectronics and electromigration remains an attractive research area in last… few decades. This work attempts to explore the driving force formalism of the electromigration phenomenon.The prime interest of this work is to investigate the physics of failure in submicron (down to 100 nm wide) Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. In order to develop the combined driving force model, commercial finite element analysis package is used. Plenty of experiments on Cu damascene interconnects are conducted, and extensive failure analyses are performed to investigate the root causes of electromigration failure. Good correlations between the model predictions and experiments are obtained. The future challenges on the study of electromigration are also discussed.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 144 pp. Englisch.
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Librería: AHA-BUCH GmbH, Einbeck, AlemaniaAHA-BUCH GmbH
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EUR 59,00
Envío por EUR 61,17Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 1 disponibles
Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This work is intended for the beginners and the advanced readers. Electromigration is VLSI/ULSI interconnection remains one of the major failure issues in microelectronics and electromigration remains an attractive research area in last…few decades. This work attempts to explore the driving force formalism of the electromigration phenomenon.The prime interest of this work is to investigate the physics of failure in submicron (down to 100 nm wide) Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. In order to develop the combined driving force model, commercial finite element analysis package is used. Plenty of experiments on Cu damascene interconnects are conducted, and extensive failure analyses are performed to investigate the root causes of electromigration failure. Good correlations between the model predictions and experiments are obtained. The future challenges on the study of electromigration are also discussed.
