ISBN: 9783838367163 - quantum dots on patterned substrates: towards order at the nanoscale: dissertation on the elastic energy of germanium quantum dots on flat and patterned silicon (001) substrates (6 resultados)

Condición: very good. Gut/Very good: Buch bzw. Schutzumschlag mit wenigen Gebrauchsspuren an Einband, Schutzumschlag oder Seiten. / Describes a book or dust jacket that does show some signs of wear on either the binding, dust jacket or pages.

Taschenbuch. Condición: Neu. Quantum Dots on Patterned Substrates: Towards Order at the Nanoscale | Dissertation on the elastic energy of Germanium quantum dots on flat and patterned Silicon (001) substrates | Guglielmo Vastola | Taschenbuch | 160 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783838367163 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.…

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This work covers some of the newly discovered properties of the Si-Ge system from a scientific point of view, not forgetting its technological relevance. After the Introduction, where the general features of the growth of Ge on Si are briefly covered, Chap. 1 focuses on the elastic properties of GeSi quantum dots and collects results. In Chap. 2 the study is extended to more than one dot, to reveal their mutual interaction. It is worth to study, in Chap. 3, the effect of a further deposition of Si on an already formed Ge-on-Si system, because of the potential technological application. Later, Chap. 4 presents an important part, namely the study of Ge/Si when the Si substrate is artificially patterned. Here, a total-energy scheme, able to predict the critical volume for island nucleation and shape transition, is extended to quantum dots grown on patterned substrates. Finally, Chap. 5 tackles the problem of mixing between Ge and Si, and gives some theoretical predictions for realistic Ge/Si islands. Due to their relevance, App. 1 reviews the major experimental techniques available to pattern Si substrates. 160 pp. Englisch.…

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Vastola GuglielmoGuglielmo Vastola was born in 1981. He holds a degree in Physics from the University of Pavia, and a Ph.D. in Nanostructures and Nanotechnologies from the University of Milano-Bicocca. He is a fellow of Almo Collegio.…

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This work covers some of the newly discovered properties of the Si-Ge system from a scientific point of view, not forgetting its technological relevance. After the Introduction, where the general features of the growth of Ge on Si are briefly covered, Chap. 1 focuses on the elastic properties of GeSi quantum dots and collects results. In Chap. 2 the study is extended to more than one dot, to reveal their mutual interaction. It is worth to study, in Chap. 3, the effect of a further deposition of Si on an already formed Ge-on-Si system, because of the potential technological application. Later, Chap. 4 presents an important part, namely the study of Ge/Si when the Si substrate is artificially patterned. Here, a total-energy scheme, able to predict the critical volume for island nucleation and shape transition, is extended to quantum dots grown on patterned substrates. Finally, Chap. 5 tackles the problem of mixing between Ge and Si, and gives some theoretical predictions for realistic Ge/Si islands. Due to their relevance, App. 1 reviews the major experimental techniques available to pattern Si substrates.…

Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This work covers some of the newly discovered properties of the Si-Ge system from a scientific point of view, not forgetting its technological relevance. After the Introduction, where the general features of the growth of Ge on Si are briefly covered, Chap. 1 focuses on the elastic properties of GeSi quantum dots and collects results. In Chap. 2 the study is extended to more than one dot, to reveal their mutual interaction. It is worth to study, in Chap. 3, the effect of a further deposition of Si on an already formed Ge-on-Si system, because of the potential technological application. Later, Chap. 4 presents an important part, namely the study of Ge/Si when the Si substrate is artificially patterned. Here, a total-energy scheme, able to predict the critical volume for island nucleation and shape transition, is extended to quantum dots grown on patterned substrates. Finally, Chap. 5 tackles the problem of mixing between Ge and Si, and gives some theoretical predictions for realistic Ge/Si islands. Due to their relevance, App. 1 reviews the major experimental techniques available to pattern Si substrates.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 160 pp. Englisch.…