ISBN: 9783639773040 - defects spectroscopy in silicon diodes: deep-level traps in semiconductors physics: from ultra-fast recovery to radiation-induced damage (5 resultados)

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Taschenbuch. Condición: Neu. Defects Spectroscopy in Silicon Diodes | Deep-level traps in semiconductors physics: from ultra-fast recovery to radiation-induced damage | Nicolò Barbero | Taschenbuch | 244 S. | Englisch | 2015 | Edizioni Accademiche Italiane | EAN 9783639773040 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.…

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book focuses on two aspects of deep-level traps in semiconductor devices: on one hand the platinum impurities are studied as example of defects diffused purposefully in pin power ultra-fast diodes in order to increase their recovery performance; on the other hand, the ionizing radiation-induced defects are considered. In this case, some academic samples are studied before and after irradiation with a 3 MeV proton beam. The devices are studied by means of IV, CV, CVT and DLTS techniques. This study deals with the characterization and dynamics of the defects, starting from the realization ab initio of new defects-spectroscopy setups. It is a research performed within the 'IAEA Coordinated Project on Utilization of Ion Accelerators for Studying and Modelling Ion Induced Radiation Defects in Semiconductors and Insulators' (2012-2015). 244 pp. Englisch.…

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book focuses on two aspects of deep-level traps in semiconductor devices: on one hand the platinum impurities are studied as example of defects diffused purposefully in pin power ultra-fast diodes in order to increase their recovery performance; on the other hand, the ionizing radiation-induced defects are considered. In this case, some academic samples are studied before and after irradiation with a 3 MeV proton beam. The devices are studied by means of IV, CV, CVT and DLTS techniques. This study deals with the characterization and dynamics of the defects, starting from the realization ab initio of new defects-spectroscopy setups. It is a research performed within the 'IAEA Coordinated Project on Utilization of Ion Accelerators for Studying and Modelling Ion Induced Radiation Defects in Semiconductors and Insulators' (2012-2015).…

Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book focuses on two aspects of deep-level traps in semiconductor devices: on one hand the platinum impurities are studied as example of defects diffused purposefully in pin power ultra-fast diodes in order to increase their recovery performance; on the other hand, the ionizing radiation-induced defects are considered. In this case, some academic samples are studied before and after irradiation with a 3 MeV proton beam. The devices are studied by means of IV, CV, CVT and DLTS techniques. This study deals with the characterization and dynamics of the defects, starting from the realization ab initio of new defects-spectroscopy setups. It is a research performed within the 'IAEA Coordinated Project on Utilization of Ion Accelerators for Studying and Modelling Ion Induced Radiation Defects in Semiconductors and Insulators' (2012-2015).OmniScriptum SRL, Str. Armeneasca 28/1, office 1, 2012 Chisinau 244 pp. Englisch.…