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Librería: Buchpark, Trebbin, Alemania
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Añadir al carritoCondición: Sehr gut. Zustand: Sehr gut | Seiten: 480 | Sprache: Englisch | Produktart: Bücher | The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
Librería: Buchpark, Trebbin, Alemania
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Añadir al carritoCondición: Sehr gut. Zustand: Sehr gut | Seiten: 480 | Sprache: Englisch | Produktart: Bücher | The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
Librería: Lucky's Textbooks, Dallas, TX, Estados Unidos de America
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Librería: California Books, Miami, FL, Estados Unidos de America
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Añadir al carritoCondición: New. This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent .
Idioma: Inglés
Publicado por Springer, Wien, Springer, 2007
ISBN 10: 3211728600 ISBN 13: 9783211728604
Librería: AHA-BUCH GmbH, Einbeck, Alemania
EUR 166,62
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Añadir al carritoSonstige Video. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - The 'Twelfth International Conference on Simulation of Semiconductor Processes and Devices' (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
Librería: Revaluation Books, Exeter, Reino Unido
EUR 236,75
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Añadir al carritoHardcover. Condición: Brand New. hardback/cd-rom edition. 458 pages. 9.25x6.25x0.75 inches. In Stock.
Librería: UK BOOKS STORE, London, LONDO, Reino Unido
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Añadir al carritoHardcover. Condición: New. Brand New! Fast Delivery This is an International Edition and ship within 24-48 hours. Deliver by FedEx and Dhl, & Aramex, UPS, & USPS and we do accept APO and PO BOX Addresses. Order can be delivered worldwide within 7-12 days and we do have flat rate for up to 2LB. Extra shipping charges will be requested if the Book weight is more than 5 LB. This Item May be shipped from India, United states & United Kingdom. Depending on your location and availability.
Librería: Mispah books, Redhill, SURRE, Reino Unido
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Añadir al carritoHardcover. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Idioma: Inglés
Publicado por Springer Vienna Sep 2007, 2007
ISBN 10: 3211728600 ISBN 13: 9783211728604
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
EUR 160,49
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Añadir al carritoBuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. 480 pp. Englisch.