ISBN: 9781461428572 - atomic scale characterization and first-principles studies of si₃n₄ interfaces (springer theses) (9 resultados)

- Tapa blanda
Librería: GreatBookPrices, Columbia, MD, Estados Unidos de AmericaGreatBookPrices
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 122,98
Envío por EUR 2,36Se envía dentro de Estados Unidos de AmericaCantidad disponible: 15 disponibles
Condición: New.

- Tapa blanda
Librería: GreatBookPrices, Columbia, MD, Estados Unidos de AmericaGreatBookPrices
Contactar con el vendedorVendedor de 5 estrellasCondición: Usado - Como Nuevo
EUR 126,69
Envío por EUR 2,36Se envía dentro de Estados Unidos de AmericaCantidad disponible: 15 disponibles
Condición: As New. Unread book in perfect condition.

- Tapa blanda
Librería: moluna, Greven, Alemaniamoluna
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 92,27
Envío por EUR 48,99Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: Más de 20 disponibles
Condición: New.

- Tapa blanda
Librería: AHA-BUCH GmbH, Einbeck, AlemaniaAHA-BUCH GmbH
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 124,85
Envío por EUR 35,00Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 1 disponible
Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline beta-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.…
Más imágenes- Tapa blanda
Librería: preigu, Osnabrück, Alemaniapreigu
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 95,50
Envío por EUR 70,00Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 5 disponibles
Taschenbuch. Condición: Neu. Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces | Weronika Walkosz | Taschenbuch | Springer Theses | xiv | Englisch | 2013 | Springer | EAN 9781461428572 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.…

- Tapa blanda
- Impresión bajo demanda
Librería: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 86,24
Envío por EUR 4,00Se envía de Italia a Estados Unidos de AmericaCantidad disponible: Más de 20 disponibles
Condición: new. Questo è un articolo print on demand.

- Tapa blanda
- Impresión bajo demanda
Librería: Chiron Media, Wallingford, Reino UnidoChiron Media
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 116,55
Envío por EUR 5,38Se envía de Reino Unido a Estados Unidos de AmericaCantidad disponible: 20 disponibles
PF. Condición: New. This item is printed on demand. Brand new book, sourced directly from publisher. Dispatch time is 6-7 days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely.

- Tapa blanda
- Impresión bajo demanda
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 106,95
Envío por EUR 23,00Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 2 disponibles
Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline beta-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. 124 pp. Englisch.…

- Tapa blanda
- Impresión bajo demanda
Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 106,99
Envío por EUR 60,00Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 1 disponible
Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline ¿¿Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 124 pp. Englisch.…