9780898382778 - Computer-Aided Design and VLSI Device Development: 53 (The Springer International Series in Engineering and Computer Science, 53) de Lee, Keunmyung; Kit Man Cham; S... (11 resultados)

Hardcover. Second Edition. Octavo, vii, xi, 379 pages. In Very Good condition. Bound in the publisher's blue cloth bearing white and black lettering to the spine. Boards have light wear exteriorly including minor wear to the edges and very sparse, tiny incidental marks. Mildly bowed boards with lightly sunned spine. Text block has extremely slight wear to the edges. Two ex-library markings interiorly. Illustrated. Second edition. NOTE: Shelved in Netdesk Column H, ND-H. 1379761. FP New Rockville Stock.

Condición: New. In.

Condición: New. pp. 400 2nd Edition.

Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs.

Hardcover. Condición: Like New. Like New. book.

Gebunden. Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation .

Buch. Condición: Neu. Computer-Aided Design and VLSI Device Development | Kit Man Cham (u. a.) | Buch | xiv | Englisch | 1988 | Springer | EAN 9780898382778 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.

Buch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 398 pp. Englisch.

Condición: New. Print on Demand pp. 400 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.

Condición: New. PRINT ON DEMAND pp. 400.

Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs. 398 pp. Englisch.