9780471739067 - Semiconductor Material and Device Characterization (IEEE Press) de Schroder, Dieter K. (17 resultados)

Condición: good. Supports Goodwill of Silicon Valley job training programs. The cover and pages are in Good condition! Any other included accessories are also in Good condition showing use. Use can include some highlighting and writing, page and cover creases as well as other types visible wear.

Condición: Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.

HRD. Condición: New. New Book. Shipped from UK. Established seller since 2000.

Condición: New.

Condición: new.

Condición: New.

Condición: As New. Unread book in perfect condition.

Condición: As New. Unread book in perfect condition.

Condición: New. pp. 800 Illus.

Condición: New. This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Num Pages: 800 pages, illustrations. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 238 x 164 x 42. Weight in Grams: 1199. . 2006. 3rd Edition. Hardcover. . . . .

Condición: New. pp. 800 Index 3rd Edition.

Condición: New. DIETER K. SCHRODER, PhD, is Professor, Department of Electrical Engineering, Arizona State University. He is a recipient of the ASU College of Engineering Teaching Excellence Award and several other teaching awards. In addition to Semiconductor Material and.

Condición: New. This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Num Pages: 800 pages, illustrations. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 238 x 164 x 42. Weight in Grams: 1199. . 2006. 3rd Edition. Hardcover. . . . . Books ship from the US and Ireland.

Hardcover. Condición: Brand New. 3rd edition. 779 pages. 9.25x6.25x1.50 inches. In Stock.

Buch. Condición: Neu. Neuware - This Third Edition updates a landmark text with the latest findingsThe Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including:\* Updated and revised figures and examples reflecting the most current data and information\* 260 new references offering access to the latest research and discussions in specialized topics\* New problems and review questions at the end of each chapter to test readers' understanding of the materialIn addition, readers will find fully updated and revised sections in each chapter.Plus, two new chapters have been added:\* Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.\* Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge.Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials.

Hardcover. Condición: Brand New. 3rd edition. 779 pages. 9.25x6.25x1.50 inches. In Stock. This item is printed on demand.

Hardcover. Condición: new. Hardcover. This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information260 new references offering access to the latest research and discussions in specialized topicsNew problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department. This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.