Semiconductor Material and Device Characterization

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9780471739067: Semiconductor Material and Device Characterization
Review:

"I strongly recommend this book for those who want to learn device characterization." (IEEE Circuits & Devices Magazine, November/December 2006)

From the Publisher:

This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: * Updated and revised figures and examples reflecting the most current data and information *260 new references offering access to the latest research and discussions in specialized topics * New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: * Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. * Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

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Editorial: John Wiley & Sons (2012)
ISBN 10: 0471739065 ISBN 13: 9780471739067
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Descripción John Wiley & Sons, 2012. Estado de conservación: Brand New. Brand New Hardcover Textbook is still wrapped MINT in the plastic. Ship from Multiple Locations, including Malaysia, Singapore, and Thailand. Shipping should take from 3-4 business days within US, Canada, UK, and other EU countries, 2-3 business days within Australia, Japan, and Singapore; for faster processing time, please choose to ship with Expedite. Thank you for looking![9067sJWSemiconMateriaDevic]. Nº de ref. de la librería 978047173906788

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Descripción John Wiley & Sons, 2012. Estado de conservación: Brand New. Brand New Hardcover Textbook is still wrapped MINT in the plastic. Ship from Multiple Locations, including Malaysia, Singapore, and Thailand. Shipping should take from 3-4 business days within US, Canada, UK, and other EU countries, 2-3 business days within Australia, Japan, and Singapore; for faster processing time, please choose to ship with Expedite. Thank you for looking![9067sJWSemiconMateriaDevic]. Nº de ref. de la librería 978047173906788

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Descripción Wiley-IEEE Press, 2006. Hardcover. Estado de conservación: New. book. Nº de ref. de la librería 0471739065

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Descripción Hardcover. Estado de conservación: New. BRAND NEW US edition / [Hardcover] [3rd Edition] / FREE UPGRADE to FedEx, UPS or Priority Mail / receive your book within 1-4 business days! / [clean wrapped, well protected] [Authentic edition exactly the same as the Official Listing] [ships within 1 business day] / Free tracking number / Genuine US Bookstore! Get your book in perfect condition! We also ship international via FedEx, UPS, or USPS Express!. Nº de ref. de la librería 391720170121011104

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Descripción Wiley-IEEE Press, 2006. Estado de conservación: New. Brand New, Unread Copy in Perfect Condition. A+ Customer Service! Summary: Preface to Third Edition. 1 Resistivity. 1.1 Introduction. 1.2 Two-Point Versus Four-Point Probe. 1.3 Wafer Mapping. 1.4 Resistivity Profiling. 1.5 Contactless Methods. 1.6 Conductivity Type. 1.7 Strengths and Weaknesses. Appendix 1.1 Resistivity as a Function of Doping Density. Appendix 1.2 Intrinsic Carrier Density. References. Problems. Review Questions. 2 Carrier and Doping Density. 2.1 Introduction. 2.2 Capacitance-Voltage (C-V). 2.3 Current-Voltage (I-V). 2.4 Measurement Errors and Precautions. 2.5 Hall Effect. 2.6 Optical Techniques. 2.7 Secondary Ion Mass Spectrometry (SIMS). 2.8 Rutherford Backscattering (RBS). 2.9 Lateral Profiling. 2.10 Strengths and Weaknesses. Appendix 2.1 Parallel or Series Connection? Appendix 2.2 Circuit Conversion. References. Problems. Review Questions. 3 Contact Resistance and Schottky Barriers. 3.1 Introduction. 3.2 Metal-Semiconductor Contacts. 3.3 Contact Resistance. 3.4 Measurement Techniques. 3.5 Schottky Barrier Height. 3.6 Comparison of Methods. 3.7 Strengths and Weaknesses. Appendix 3.1 Effect of Parasitic Resistance. Appendix 3.2 Alloys for Contacts to Semiconductors. References. Problems. Review Questions. 4 Series Resistance, Channel Length and Width, and Threshold Voltage. 4.1 Introduction. 4.2 PN Junction Diodes. 4.3 Schottky Barrier Diodes. 4.4 Solar Cells. 4.5 Bipolar Junction Transistors. 4.6 MOSFETS. 4.7 MESFETS and MODFETS. 4.8 Threshold Voltage. 4.9 Pseudo MOSFET. 4.10 Strengths and Weaknesses. Appendix 4.1 Schottky Diode Current-Voltage Equation. References. Problems. Review Questions. 5 Defects. 5.1 Introduction. 5.2 Generation-Recombination Statistics. 5.3 Capacitance Measurements. 5.4 Current Measurements. 5.5 Charge Measurements. 5.6 Deep-Level Transient Spectroscopy (DLTS). 5.7 Thermally Stimulated Capacitance and Current. 5.8 Positron Annihilation Spectroscopy (PAS). 5.9 Strengths and Weaknesses. Appendix 5.1 Activation Energy and Capture Cross-Section. Appendix 5.2 Time Constant Extraction. Appendix 5.3 Si and GaAs Data. References. Problems. Review Questions. 6 Oxide and Interface Trapped Charges, Oxide Thickness. 6.1 Introduction. 6.2 Fixed, Oxide Trapped, and Mobile Oxide Charge. 6.3 Interface Trapped Charge. 6.4 Oxide Thickness. 6.5 Strengths and Weaknesses. Appendix 6.1 Capacitance Measurement Techniques. Appendix 6.2 Effect of Chuck Capacitance and Leakage Current. References. Problems. Review Questions. 7 Carrier Lifetimes. 7.1 Introduction. 7.2 Recombination Lifetime/Surface Recombination Velocity. 7.3 Generation Lifetime/Surface Generation Velocity. 7.4 Recombination Lifetime-Optical Measurements. 7.5 Recombination Lifetime-Electrical Measurements. 7.6 Generation Lifetime-Electrical Measurements. 7.7 Strengths and Weaknesses. Appendix 7.1 Optical Excitation. Appendix 7.2 Electrical Excitation. References. Problems. Review Questions. 8 Mobility. 8.1 Introduction. 8.2 Conductivity Mobility. 8.3 Hall Effect and Mobility. 8.4 Magnetores. Nº de ref. de la librería ABE_book_new_0471739065

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Descripción John Wiley and Sons Ltd, United Kingdom, 2006. Hardback. Estado de conservación: New. 3rd Revised edition. 240 x 160 mm. Language: English . Brand New Book. This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: * Updated and revised figures and examples reflecting the most current data and information *260 new references offering access to the latest research and discussions in specialized topics * New problems and review questions at the end of each chapter to test readers understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: * Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. * Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor s Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department. Nº de ref. de la librería ALB9780471739067

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Descripción John Wiley and Sons Ltd 2006-02-17, Chicester, 2006. hardback. Estado de conservación: New. Nº de ref. de la librería 9780471739067

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Schroder, Dieter K.
Editorial: John Wiley and Sons Ltd, United Kingdom (2006)
ISBN 10: 0471739065 ISBN 13: 9780471739067
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The Book Depository
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Descripción John Wiley and Sons Ltd, United Kingdom, 2006. Hardback. Estado de conservación: New. 3rd Revised edition. 240 x 160 mm. Language: English . Brand New Book. This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: * Updated and revised figures and examples reflecting the most current data and information *260 new references offering access to the latest research and discussions in specialized topics * New problems and review questions at the end of each chapter to test readers understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: * Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. * Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor s Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department. Nº de ref. de la librería ALB9780471739067

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