raed amro (6 resultados)

Paperback. Condición: Brand New. 136 pages. 8.66x5.91x0.31 inches. In Stock.

Taschenbuch. Condición: Neu. Life-Time Estimation of Modern Power Electronics Devices | Power cycling capability of advanced packaging and interconnection technologies at high temperature swings | Raed Amro | Taschenbuch | 136 S. | Englisch | 2017 | Noor Publishing | EAN 9783330852563 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years. 136 pp. Englisch.

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Amro RaedDr Raed Amro holds a doctoral degree in electrical engineering from the Technical University of Chemnitz in Germany.works as Professor at Palestine Polytechnic University in Hebron-Palestine.Due to the increasing advanc.

Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within ¿s is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated (Books on Demand GmbH, Überseering 33, 22297 Hamburg 136 pp. Englisch.

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years.