Librería: Goodwill of Silicon Valley, SAN JOSE, CA, Estados Unidos de America
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Añadir al carritoCondición: good. Supports Goodwill of Silicon Valley job training programs. The cover and pages are in Good condition! Any other included accessories are also in Good condition showing use. Use can include some highlighting and writing, page and cover creases as well as other types visible wear.
Idioma: Inglés
Publicado por Materials Research Society, 2004
ISBN 10: 1558997636 ISBN 13: 9781558997639
Librería: CONTINENTAL MEDIA & BEYOND, Ocala, FL, Estados Unidos de America
EUR 43,37
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Añadir al carritoCondición: Used: Good. xlibrary 2004 hc no dj as issued vol 813 withdrawn stamp in book/ on edge of pages clean crisp pages rare and out of print 189 pages::: K-19.
Librería: Rarewaves.com USA, London, LONDO, Reino Unido
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Librería: Antiquariat Bookfarm, Löbnitz, Alemania
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Añadir al carritoHardcover. S. 1092-1323 Ehem. Bibliotheksexemplar mit Signatur und Stempel. GUTER Zustand, ein paar Gebrauchsspuren. Ex-library with stamp and library-signature. GOOD condition, some traces of use. 9783527405121 Sprache: Englisch Gewicht in Gramm: 550.
Librería: Storisende Versandbuchhandlung, Melle, Alemania
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Añadir al carritoCondición: befriedigend. Sprache: deutsch Leinen ,Schutzumschlag fehlt.
Librería: Ria Christie Collections, Uxbridge, Reino Unido
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Librería: Ria Christie Collections, Uxbridge, Reino Unido
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Librería: GreatBookPrices, Columbia, MD, Estados Unidos de America
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Librería: GreatBookPrices, Columbia, MD, Estados Unidos de America
EUR 178,35
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Librería: GreatBookPrices, Columbia, MD, Estados Unidos de America
EUR 178,67
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Librería: GreatBookPricesUK, Woodford Green, Reino Unido
EUR 161,45
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Librería: GreatBookPricesUK, Woodford Green, Reino Unido
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Librería: GreatBookPricesUK, Woodford Green, Reino Unido
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Librería: Books Puddle, New York, NY, Estados Unidos de America
EUR 210,87
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Añadir al carritoCondición: New. pp. 260.
Librería: AHA-BUCH GmbH, Einbeck, Alemania
EUR 168,73
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Añadir al carritoBuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on 'Zinc oxide as a material for micro- and optoelectronic applications', held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV.
Librería: GreatBookPricesUK, Woodford Green, Reino Unido
EUR 253,77
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Librería: Mispah books, Redhill, SURRE, Reino Unido
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Librería: GreatBookPrices, Columbia, MD, Estados Unidos de America
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Librería: Mispah books, Redhill, SURRE, Reino Unido
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Librería: AHA-BUCH GmbH, Einbeck, Alemania
EUR 241,87
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Añadir al carritoTaschenbuch. Condición: Neu. Neuware - Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on 'Zinc oxide as a material for micro- and optoelectronic applications', held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV.
Librería: Revaluation Books, Exeter, Reino Unido
EUR 337,81
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Añadir al carritoPaperback. Condición: Brand New. 216 pages. 10.00x7.00x0.49 inches. In Stock.
Publicado por MRS, 1998
Librería: Martinton Book Company, Martinton, IL, Estados Unidos de America
EUR 99,33
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Añadir al carritoFine condition. Hardbound. No Marks.
EUR 36,96
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Añadir al carritoPaperback. Condición: New. Erstauflage.
Idioma: Inglés
Publicado por Springer Netherlands Aug 2005, 2005
ISBN 10: 1402034733 ISBN 13: 9781402034732
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
EUR 160,49
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Añadir al carritoBuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on 'Zinc oxide as a material for micro- and optoelectronic applications', held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV. 256 pp. Englisch.
Librería: moluna, Greven, Alemania
EUR 136,16
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Añadir al carritoGebunden. Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Latest research results on the fabrication and fundamental understanding of ZnO and ZnO based devicesZnO bulk and layer growth of undoped and p-type doped material, influence of impurities (oxygen, hydrogen, transition metals) on electrical and op.
Librería: Majestic Books, Hounslow, Reino Unido
EUR 200,06
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Añadir al carritoCondición: New. Print on Demand pp. 260 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
Librería: Biblios, Frankfurt am main, HESSE, Alemania
EUR 202,79
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Añadir al carritoCondición: New. PRINT ON DEMAND pp. 260.
Idioma: Inglés
Publicado por Springer, Springer Aug 2005, 2005
ISBN 10: 1402034733 ISBN 13: 9781402034732
Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemania
EUR 160,49
Cantidad disponible: 1 disponibles
Añadir al carritoBuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on ¿Zinc oxide as a material for micro- and optoelectronic applications¿, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 ¿ 40 meV and 60 ¿ 70 meV.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 256 pp. Englisch.