Iain thayne (36 resultados)

Paperback. Condición: Very Good. The book has been read, but is in excellent condition. Pages are intact and not marred by notes or highlighting. The spine remains undamaged.

Paperback. Condición: New. This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 5-9 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited. Historically, scaling in Si CMOS was primarily led by lithography. In the last decade, this situation has been completely revolutionized with the introduction of the likes of copper interconnects, high-k gate dielectrics, metal gates, and strained silicon to meet the demands of the International Technology Roadmap for Semiconductors as the technology generations were reduced beyond 45 nm. As we look towards the end of the roadmap and beyond, the proliferation of potential solutions to meet the necessary performance challenges becomes truly staggering, and has motivated an exponential increase in research in a wide range of emerging materials and devices architectures.…

Condición: Very Good. Item in very good condition! Textbooks may not include supplemental items i.e. CDs, access codes etc.

Condición: New.

Paperback. Condición: Very Good. This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 5-9 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited. Historically, scaling in Si CMOS was primarily led by lithography. In the last decade, this situation has been completely revolutionized with the introduction of the likes of copper interconnects, high-k gate dielectrics, metal gates, and strained silicon to meet the demands of the International Technology Roadmap for Semiconductors as the technology generations were reduced beyond 45 nm. As we look towards the end of the roadmap and beyond, the proliferation of potential solutions to meet the necessary performance challenges becomes truly staggering, and has motivated an exponential increase in research in a wide range of emerging materials and devices architectures. …

Condición: New. In English.

PF. Condición: New.

Condición: New. pp. 162.

Condición: New.

Condición: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.

Condición: New.

Taschenbuch. Condición: Neu. Neuware.

Paperback. Condición: New. This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 5-9 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited. Historically, scaling in Si CMOS was primarily led by lithography. In the last decade, this situation has been completely revolutionized with the introduction of the likes of copper interconnects, high-k gate dielectrics, metal gates, and strained silicon to meet the demands of the International Technology Roadmap for Semiconductors as the technology generations were reduced beyond 45 nm. As we look towards the end of the roadmap and beyond, the proliferation of potential solutions to meet the necessary performance challenges becomes truly staggering, and has motivated an exponential increase in research in a wide range of emerging materials and devices architectures.…

Condición: New.

Condición: New.

Condición: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Ramanathan, Shriram; Guha, Supratik; Mannhart, Jochen; Kummel, Andrew C.; Watanabe, Heiji; Thayne, Iain; Majhi, Prashant; Bonafos, Caroline; Fujisaki, Yoshihisa; Dimitrakis, P. Series: MRS Proceedings. Num Pages: Illustrations. BIC Classification: TGM. Category: (U) Tertiary Education (US: College). Dimension: 228 x 152 x 15. Weight in Grams: 364. . 2010. hardcover. . . . . …

Condición: New. In English.

Condición: New.

Condición: New. pp. ix + 149.

Hardcover. Condición: Brand New. 149 pages. 9.00x6.00x0.25 inches. In Stock.

Condición: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Ramanathan, Shriram; Guha, Supratik; Mannhart, Jochen; Kummel, Andrew C.; Watanabe, Heiji; Thayne, Iain; Majhi, Prashant; Bonafos, Caroline; Fujisaki, Yoshihisa; Dimitrakis, P. Series: MRS Proceedings. Num Pages: Illustrations. BIC Classification: TGM. Category: (U) Tertiary Education (US: College). Dimension: 228 x 152 x 15. Weight in Grams: 364. . 2010. hardcover. . . . . Books ship from the US and Ireland. …

Condición: As New. Unread book in perfect condition.

Hardcover. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 5-9 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited. Historically, scaling in Si CMOS was primarily led by lithography. In the last decade, this situation has been completely revolutionized with the introduction of the likes of copper interconnects, high-k gate dielectrics, metal gates, and strained silicon to meet the demands of the International Technology Roadmap for Semiconductors as the technology generations were reduced beyond 45 nm. As we look towards the end of the roadmap and beyond, the proliferation of potential solutions to meet the necessary performance challenges becomes truly staggering, and has motivated an exponential increase in research in a wide range of emerging materials and devices architectures.…

Condición: As New. Unread book in perfect condition.

Condición: New.

Paperback / softback. Condición: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.

Condición: New. Print on Demand pp. 162.

Condición: New. PRINT ON DEMAND pp. 162.

Paperback. Condición: new. Paperback. This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 59 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited. Historically, scaling in Si CMOS was primarily led by lithography. In the last decade, this situation has been completely revolutionized with the introduction of the likes of copper interconnects, high-k gate dielectrics, metal gates, and strained silicon to meet the demands of the International Technology Roadmap for Semiconductors as the technology generations were reduced beyond 45 nm. As we look towards the end of the roadmap and beyond, the proliferation of potential solutions to meet the necessary performance challenges becomes truly staggering, and has motivated an exponential increase in research in a wide range of emerging materials and devices architectures. This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 59 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. …