This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
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Rüdiger Quay was born in Köln, Germany, in 1971. He studied physics and economics at the University of Bonn and the RWTH Aachen, where he received his "Diplom" in physics in 1997. In summer 1996 he held a visiting research position at Los Alamos National Laboratory, New Mexico, USA, for his master's thesis. In 1999, he was a visiting researcher at the Beckman Institute, University of Illinois, Urbana Champaign. In 2001 he received the doctoral degree in technical sciences with honors from the Technische Universität Wien, Austria. He has published more than 30 refereed publications and he is one of the authors of the book "Analysis and Simulation of Heterostructure Devices". His scientific interests include RF-semiconductor device and process development, heterostructure device modeling and simulation, and circuit and reliability issues. Rüdiger Quay currently is a research engineer at Fraunhofer Institute for Applied Solid-State Physics (IAF) in Freiburg, Germany, involved in the development and large-signal characterization of high-power and high-speed AlGaN/GaN amplifiers and the development of high-speed InP HBTs for high data rate communication at 80~Gbit/s and beyond.
Gallium Nitride Electronics covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material properties of III-N semiconductors and substrates; the state-of-the-art of devices and circuits, epitaxial growth, device technology, modelling and characterization; and circuit examples are discussed. The book concludes with device reliability aspects and an overview of integration and packaging. This comprehensive monograph and tutorial is based on more than a decade of research on materials, devices, and circuits. It is of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; and to all scientists with a general interest in advanced electronics.
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Librería: Brook Bookstore On Demand, Napoli, NA, Italia
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Librería: moluna, Greven, Alemania
Gebunden. Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Comprehensive presentation of the state of the art in GaN electronics with strong emphasis on applicationComprehensive presentation - from materials to packagingInterdisciplinary approachRuediger Quay was born in Koeln, Germany, in. Nº de ref. del artículo: 4899310
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Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Gallium Nitride Electronics covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material properties of III-N semiconductors and substrates; the state-of-the-art of devices and circuits, epitaxial growth, device technology, modelling and characterization; and circuit examples are discussed. The book concludes with device reliability aspects and an overview of integration and packaging. This comprehensive monograph and tutorial is based on more than a decade of research on materials, devices, and circuits. It is of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; and to all scientists with a general interest in advanced electronics. 504 pp. Englisch. Nº de ref. del artículo: 9783540718901
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Buch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Gallium Nitride Electronics covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material properties of III-N semiconductors and substrates; the state-of-the-art of devices and circuits, epitaxial growth, device technology, modelling and characterization; and circuit examples are discussed. The book concludes with device reliability aspects and an overview of integration and packaging. This comprehensive monograph and tutorial is based on more than a decade of research on materials, devices, and circuits. It is of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; and to all scientists with a general interest in advanced electronics.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 504 pp. Englisch. Nº de ref. del artículo: 9783540718901
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Librería: AHA-BUCH GmbH, Einbeck, Alemania
Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Gallium Nitride Electronics covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material properties of III-N semiconductors and substrates; the state-of-the-art of devices and circuits, epitaxial growth, device technology, modelling and characterization; and circuit examples are discussed. The book concludes with device reliability aspects and an overview of integration and packaging. This comprehensive monograph and tutorial is based on more than a decade of research on materials, devices, and circuits. It is of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; and to all scientists with a general interest in advanced electronics. Nº de ref. del artículo: 9783540718901
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Condición: New. Print on Demand pp. xxx + 469 1st Edition. Nº de ref. del artículo: 26294400
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