Artículos relacionados a Gallium Nitride Electronics: 96 (Springer Series in...

Gallium Nitride Electronics: 96 (Springer Series in Materials Science, 96) - Tapa dura

Libro 18 de 233: Springer Series in Materials Science

Quay, Rüdiger

 
9783540718901: Gallium Nitride Electronics: 96 (Springer Series in Materials Science, 96)
Tapa dura
ISBN 10: 3540718907 ISBN 13: 9783540718901
Editorial: Springer, 2008

Sinopsis

This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

"Sinopsis" puede pertenecer a otra edición de este libro.

Acerca del autor

Rüdiger Quay was born in Köln, Germany, in 1971. He studied physics and economics at the University of Bonn and the RWTH Aachen, where he received his "Diplom" in physics in 1997. In summer 1996 he held a visiting research position at Los Alamos National Laboratory, New Mexico, USA, for his master's thesis. In 1999, he was a visiting researcher at the Beckman Institute, University of Illinois, Urbana Champaign. In 2001 he received the doctoral degree in technical sciences with honors from the Technische Universität Wien, Austria. He has published more than 30 refereed publications and he is one of the authors of the book "Analysis and Simulation of Heterostructure Devices". His scientific interests include RF-semiconductor device and process development, heterostructure device modeling and simulation, and circuit and reliability issues. Rüdiger Quay currently is a research engineer at Fraunhofer Institute for Applied Solid-State Physics (IAF) in Freiburg, Germany, involved in the development and large-signal characterization of high-power and high-speed AlGaN/GaN amplifiers and the development of high-speed InP HBTs for high data rate communication at 80~Gbit/s and beyond.

De la contraportada

Gallium Nitride Electronics covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material properties of III-N semiconductors and substrates; the state-of-the-art of devices and circuits, epitaxial growth, device technology, modelling and characterization; and circuit examples are discussed. The book concludes with device reliability aspects and an overview of integration and packaging. This comprehensive monograph and tutorial is based on more than a decade of research on materials, devices, and circuits. It is of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; and to all scientists with a general interest in advanced electronics.

"Sobre este título" puede pertenecer a otra edición de este libro.

Editorial
Springer
Año de publicación
2008
Idioma
Inglés
ISBN 10 
3540718907
ISBN 13 
9783540718901
Encuadernación
Tapa dura
Número de páginas
504
Contacto del fabricante
ProductSafety@springernature.com
ProductSafety@springernature.com

Europaplatz 3
Heidelberg
69115
Alemania