Multi-run Memory Tests for Pattern Sensitive Faults - Tapa dura

Mrozek, Ireneusz

 
9783319912035: Multi-run Memory Tests for Pattern Sensitive Faults
Tapa dura
ISBN 10: 3319912038 ISBN 13: 9783319912035
Editorial: Springer, 2018

Sinopsis

This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory.  The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.

  • Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
  • Presents practical algorithms for design and implementation of efficient multi-run tests;
  • Demonstrates methods verified by analytical and experimental investigations.

"Sinopsis" puede pertenecer a otra edición de este libro.

Acerca del autor

Ireneusz Mrozek received his M.Sc. and Ph.D. degrees in computer science in 1994 and 2004,respectively. Since 1994 he has been employed at the Faculty of Computer Science of Bialystok Technical University (Poland). His main research interests include the area of diagnostic testing of embedded memories. Particularly, he focuses on transparent tests for RAM as well as the application of these in the BIST or BISR schemes. He has also gained industrial experience working as a Senior Software Engineer at Motorola Solutions.

De la contraportada

This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory.  The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.

  • Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
  • Presents practical algorithms for design and implementation of efficient multi-run tests;
  • Demonstrates methods verified by analytical and experimental investigations.

"Sobre este título" puede pertenecer a otra edición de este libro.

Editorial
Springer
Año de publicación
2018
Idioma
Inglés
ISBN 10 
3319912038
ISBN 13 
9783319912035
Encuadernación
Tapa dura
Número de edición
1
Número de páginas
148
Contacto del fabricante
Springer Nature Customer Service Center GmbH
ProductSafety@springernature.com

Europaplatz 3,69115 Heidelberg, Germany
Heidelberg
69115
Alemania

Otras ediciones populares con el mismo título

9783030081980: Multi-run Memory Tests for Pattern Sensitive Faults

Edición Destacada

ISBN 10:  3030081982 ISBN 13:  9783030081980
Editorial: Springer, 2019
Tapa blanda