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Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces (Springer Theses) - Tapa blanda
Sinopsis
This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline β-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.
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This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline ß-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.
This Doctoral Thesis has been accepted by the University of Illinois-Chicago, Chicago, USA.
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Atomic Scale Characterization and First-Principles Studies of Si3N4 Interfaces
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Atomic Scale Characterization and First-Principles Studies of Si?N? Interfaces (Springer Theses)
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Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces
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Springer New York Mai 2013, 2013
ISBN 10: 1461428572
ISBN 13: 9781461428572
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Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline beta-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. 124 pp. Englisch. Nº de ref. del artículo: 9781461428572
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Atomic Scale Characterization and First-Principles Studies of Si3n4 Interfaces
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Atomic Scale Characterization and First-Principles Studies of Si?N? Interfaces (Springer Theses)
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Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces
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Springer New York, Springer US, 2013
ISBN 10: 1461428572
ISBN 13: 9781461428572
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Librería: AHA-BUCH GmbH, Einbeck, Alemania
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Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline beta-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. Nº de ref. del artículo: 9781461428572
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Atomic Scale Characterization and First-Principles Studies of Si3N4 Interfaces
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Atomic Scale Characterization and First-Principles Studies of Si3n4 Interfaces
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Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces
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Springer New York, Springer US Mai 2013, 2013
ISBN 10: 1461428572
ISBN 13: 9781461428572
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Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemania
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Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline ¿¿Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 124 pp. Englisch. Nº de ref. del artículo: 9781461428572
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Atomic Scale Characterization and First-principles Studies of Si N Interfaces
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Springer-Verlag New York Inc., 2013
ISBN 10: 1461428572
ISBN 13: 9781461428572
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Librería: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
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Condición: New. This book offers results that influence many high temperature and pressure applications. It provides findings that will offer increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. Series: Springer Theses. Num Pages: 110 pages, 2 black & white tables, biography. BIC Classification: PNFS; PNR; TDCB. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 6. Weight in Grams: 201. . 2013. Paperback. . . . . Nº de ref. del artículo: V9781461428572
Cantidad disponible: 15 disponibles