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Towards the First Silicon Laser: 93 (NATO Science Series II: Mathematics, Physics and Chemistry, 93) - Tapa dura

Libro 57 de 241: NATO Science Series II: Mathematics, Physics and Chemistry
 
9781402011931: Towards the First Silicon Laser: 93 (NATO Science Series II: Mathematics, Physics and Chemistry, 93)
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ISBN 10: 1402011938 ISBN 13: 9781402011931
Editorial: Springer, 2003

Sinopsis

Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book.

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Reseña del editor

Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book.

"Sobre este título" puede pertenecer a otra edición de este libro.

Editorial
Springer
Año de publicación
2003
Idioma
Inglés
ISBN 10 
1402011938
ISBN 13 
9781402011931
Encuadernación
Tapa dura
Número de páginas
500
Editor
Pavesi Lorenzo, Dal Negro Luca, Gaponenko Sergey
Contacto del fabricante
no disponible
Persona responsable
gpsr@libri.de
gpsr@libri.de

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