Progress in SOI Structures and Devices Operating at Extreme Conditions (Nato Science Series II (closed)): 58 (NATO Science Series II: Mathematics, Physics and Chemistry, 58) - Tapa blanda

 
9781402005763: Progress in SOI Structures and Devices Operating at Extreme Conditions (Nato Science Series II (closed)): 58 (NATO Science Series II: Mathematics, Physics and Chemistry, 58)
Tapa blanda
ISBN 10: 1402005768 ISBN 13: 9781402005763
Editorial: Springer, 2002

Sinopsis

A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.

"Sinopsis" puede pertenecer a otra edición de este libro.

Reseña del editor

A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.

"Sobre este título" puede pertenecer a otra edición de este libro.

Editorial
Springer
Año de publicación
2002
Idioma
Inglés
ISBN 10 
1402005768
ISBN 13 
9781402005763
Encuadernación
Tapa blanda
Número de páginas
364
Editor
Balestra Francis
Contacto del fabricante
no disponible
Persona responsable
CMN Printpool Inh. Mathis Neumann
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Hamburg
Alemania

Otras ediciones populares con el mismo título

9781402005756: Progress in SOI Structures and Devices Operating at Extreme Conditions: 58 (NATO Science Series II: Mathematics, Physics and Chemistry)

Edición Destacada

ISBN 10:  140200575X ISBN 13:  9781402005756
Editorial: Springer, 2002
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