p-n junction transistors, pp. 151-62 in Physical Review Vol. 83, No. 1, July 1, 1951. INVENTION OF THE JUNCTION TRANSISTOR: NOBEL PRIZE 1956

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First edition, journal issue in original printed wrappers, of the invention of the junction transistor. Following the invention of the point-contact transistor by Bardeen & Brattain, William Shockley developed the theory of the p-n junction transistor, but its construction posed formidable challenges. Gordon Teal solved the problem of producing large single crystals of germanium by suspending a small "seed" crystal of germanium in a crucible of molten germanium and slowly withdrawing it, forming a long, narrow, single crystal. Shockley later called this achievement "the most important scientific development in the semiconductor field in the early days." Employing this technique, Teal and Sparks fabricated p-n junctions by dropping tiny pellets of p- and n-type impurities into the molten germanium during the crystal-growing process, with which they were able to fabricate the first junction transistor. By 1951, such grown-junction transistors surpassed the best point-contact transistors in performance. Shockley, together with Bardeen and Brattain, received the Nobel Prize in Physics in 1956 "for their researches on semiconductors and their discovery of the transistor effect." Large 8vo, pp. [ii], 248. Original printed wrappers (spine slightly darkened, rear cover a little soiled, tiny tear to upper edge of rear cover and last few leaves, nowhere near text and not affectibg the transistor paper). N° de ref. del artículo ABE-1679652102770

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