9783838341422 - Understanding the growth of epitaxial InAs/GaAs nanowires: using Electron Microscopy - for future nano-optoelectronics de Paladugu, Mohan Chand (9 resultados)

Condición: New. pp. 120.

Taschenbuch. Condición: Neu. Understanding the growth of epitaxial InAs/GaAs nanowires | using Electron Microscopy - for future nano-optoelectronics | Mohan Chand Paladugu | Taschenbuch | 120 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783838341422 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Materials in smaller scales exhibit promising properties that are useful for wide variety of applications. Semiconductor quantum wells and quantum dots are two main examples of low-dimensional systems, where the quantum wells act as two-dimensional systems and the quantum dots act as zero-dimensional systems. Alternatively, semiconductor nanowires act as one-dimensional materials, and they exhibit promising and device applicable properties. These semiconductor nanowires are expected to be the building blocks for future nanoelectronic and nano-optoelectronic device technology. Compositional modulation within an individual nanowire (heterostructure) enables the designing of band structure of a nanowire and thereby allows the fabrication of single nanowire devices. These nanowire heterostructures show many potential properties and consequent applications. However, the fundamental growth mechanisms nanowire heterostructures have not been explored sufficiently due to their complex nature of the growth. In this regard, this book addresses the fundamental issues associated with the growth of epitaxial axial and radial nanowire heterostructures. 120 pp. Englisch.

Condición: New. Print on Demand pp. 120 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Materials in smaller scales exhibit promising properties that are useful for wide variety of applications. Semiconductor quantum wells and quantum dots are two main examples of low-dimensional systems, where the quantum wells act as two-dimensional systems .

Condición: New. PRINT ON DEMAND pp. 120.

Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Materials in smaller scales exhibit promising properties that are useful for wide variety of applications. Semiconductor quantum wells and quantum dots are two main examples of low-dimensional systems, where the quantum wells act as two-dimensional systems and the quantum dots act as zero-dimensional systems. Alternatively, semiconductor nanowires act as one-dimensional materials, and they exhibit promising and device applicable properties. These semiconductor nanowires are expected to be the building blocks for future nanoelectronic and nano-optoelectronic device technology. Compositional modulation within an individual nanowire (heterostructure) enables the designing of band structure of a nanowire and thereby allows the fabrication of single nanowire devices. These nanowire heterostructures show many potential properties and consequent applications. However, the fundamental growth mechanisms nanowire heterostructures have not been explored sufficiently due to their complex nature of the growth. In this regard, this book addresses the fundamental issues associated with the growth of epitaxial axial and radial nanowire heterostructures.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 120 pp. Englisch.

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Materials in smaller scales exhibit promising properties that are useful for wide variety of applications. Semiconductor quantum wells and quantum dots are two main examples of low-dimensional systems, where the quantum wells act as two-dimensional systems and the quantum dots act as zero-dimensional systems. Alternatively, semiconductor nanowires act as one-dimensional materials, and they exhibit promising and device applicable properties. These semiconductor nanowires are expected to be the building blocks for future nanoelectronic and nano-optoelectronic device technology. Compositional modulation within an individual nanowire (heterostructure) enables the designing of band structure of a nanowire and thereby allows the fabrication of single nanowire devices. These nanowire heterostructures show many potential properties and consequent applications. However, the fundamental growth mechanisms nanowire heterostructures have not been explored sufficiently due to their complex nature of the growth. In this regard, this book addresses the fundamental issues associated with the growth of epitaxial axial and radial nanowire heterostructures.