9783319709161 - Semiconductor Power Devices: Physics, Characteristics, Reliability de Schlangenotto, Heinrich; Lutz, Josef; Scheuermann, Uwe (8 resultados)

Condición: New. In English.

Hardcover. Condición: New. New. book.

Hardcover. Condición: Brand New. 2nd edition. 733 pages. 9.45x6.61x1.77 inches. In Stock.

Condición: new. Questo è un articolo print on demand.

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Describes structure, characteristics and technical features of specific power devices&nbspIncludes sections on packaging and reliabilityUniquely deals with the effects of emittersJosef Lutz studied Physics at the Un.

Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as keyaspects ofsemiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition. 736 pp. Englisch.

Buch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed.This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 736 pp. Englisch.

Buch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as keyaspects ofsemiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.