Isbn: 9781785613654 - high frequency mosfet gate drivers: technologies and applications (materials, circuits and devices) (17 resultados)

Idioma: Inglés
Editorial: The Institution of Engineering and Technology, 2017
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Librería: Marlton Books, Bridgeton, NJ, Estados Unidos de AmericaMarlton Books
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EUR 101,24
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Condición: Good. Has some wear and creases. Has a remainder mark. hardcover Used - Good 2017.

Idioma: Inglés
Editorial: The Institution of Engineering and Technology, 2017
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Librería: GreatBookPrices, Columbia, MD, Estados Unidos de AmericaGreatBookPrices
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EUR 142,14
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Condición: New.

Idioma: Inglés
Editorial: Institution of Engineering and Technology, GB, 2017
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Librería: Rarewaves USA, HEBRON, KY, Estados Unidos de AmericaRarewaves USA
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EUR 144,57
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Hardback. Condición: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

Idioma: Inglés
Editorial: The Institution of Engineering and Technology, 2017
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Librería: California Books, Miami, FL, Estados Unidos de AmericaCalifornia Books
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EUR 148,35
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Condición: New.

Idioma: Inglés
Editorial: The Institution of Engineering and Technology, 2017
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Librería: GreatBookPrices, Columbia, MD, Estados Unidos de AmericaGreatBookPrices
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EUR 146,66
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Condición: As New. Unread book in perfect condition.

Idioma: Inglés
Editorial: The Institution of Engineering and Technology, 2017
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Librería: GreatBookPricesUK, Woodford Green, Reino UnidoGreatBookPricesUK
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EUR 137,88
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Condición: New.

Idioma: Inglés
Editorial: The Institution of Engineering and Technology, 2017
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Librería: Ria Christie Collections, Uxbridge, Reino UnidoRia Christie Collections
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EUR 149,42
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Condición: New. In English.

Idioma: Inglés
Editorial: The Institution of Engineering and Technology, 2017
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Librería: GreatBookPricesUK, Woodford Green, Reino UnidoGreatBookPricesUK
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EUR 150,63
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Condición: As New. Unread book in perfect condition.

Idioma: Inglés
Editorial: Institution of Engineering and Technology, GB, 2017
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Librería: Rarewaves.com USA, London, LONDO, Reino UnidoRarewaves.com USA
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EUR 172,76
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Hardback. Condición: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

Idioma: Inglés
Editorial: Institution of Engineering and Technology, GB, 2017
- Tapa dura
Librería: Rarewaves USA United, HEBRON, KY, Estados Unidos de AmericaRarewaves USA United
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EUR 145,48
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Hardback. Condición: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

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Librería: moluna, Greven, Alemaniamoluna
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EUR 148,00
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Gebunden. Condición: New. Über den AutorrnrnZhiLiang Zhang is a Professor at the Aero-Power Sci-Tech Center of Nanjing University of Aeronautics and Astronautics, China. His research interests include high-frequency power converters and renewable energy power con.

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Librería: Revaluation Books, Exeter, Reino UnidoRevaluation Books
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EUR 195,31
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Hardcover. Condición: Brand New. 296 pages. 9.50x6.25x1.00 inches. In Stock.

Idioma: Inglés
Editorial: The Institution of Engineering and Technology, 2017
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Librería: Books Puddle, Woodside, NY, Estados Unidos de AmericaBooks Puddle
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EUR 234,72
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Condición: New.

Idioma: Inglés
Editorial: Institution of Engineering and Technology, GB, 2017
- Tapa dura
Librería: Rarewaves.com UK, London, Reino UnidoRarewaves.com UK
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EUR 168,25
Envío por EUR 76,27Se envía de Reino Unido a Estados Unidos de AmericaCantidad disponible: Más de 20 disponibles
Hardback. Condición: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

Idioma: Inglés
Editorial: The Institution of Engineering and Technology, 2017
- Tapa dura
Librería: Majestic Books, Hounslow, Reino UnidoMajestic Books
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EUR 244,76
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Condición: New.

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Librería: PBShop.store UK, Fairford, GLOS, Reino UnidoPBShop.store UK
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EUR 137,89
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HRD. Condición: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

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Librería: PBShop.store US, Wood Dale, IL, Estados Unidos de AmericaPBShop.store US
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EUR 145,31
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HRD. Condición: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.