Isbn: 9781785613654 - high frequency mosfet gate drivers: technologies and applications (materials, circuits and devices) (17 resultados)

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  • Idioma: Inglés

    Editorial: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

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    Librería: Marlton Books, Bridgeton, NJ, Estados Unidos de AmericaMarlton Books

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    Condición: Usado - Aceptable

    EUR 101,24

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    Condición: Good. Has some wear and creases. Has a remainder mark. hardcover Used - Good 2017.

  • Idioma: Inglés

    Editorial: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

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    Librería: GreatBookPrices, Columbia, MD, Estados Unidos de AmericaGreatBookPrices

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    EUR 142,14

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    Condición: New.

  • Idioma: Inglés

    Editorial: Institution of Engineering and Technology, GB, 2017

    1785613650 / 9781785613654

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    Librería: Rarewaves USA, HEBRON, KY, Estados Unidos de AmericaRarewaves USA

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    Condición: Nuevo

    EUR 144,57

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    Hardback. Condición: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

  • Idioma: Inglés

    Editorial: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

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    Librería: California Books, Miami, FL, Estados Unidos de AmericaCalifornia Books

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    EUR 148,35

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    Condición: New.

  • Idioma: Inglés

    Editorial: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

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    Librería: GreatBookPrices, Columbia, MD, Estados Unidos de AmericaGreatBookPrices

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    Condición: Usado - Como Nuevo

    EUR 146,66

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    Condición: As New. Unread book in perfect condition.

  • Idioma: Inglés

    Editorial: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

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    Librería: GreatBookPricesUK, Woodford Green, Reino UnidoGreatBookPricesUK

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    Condición: Nuevo

    EUR 137,88

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    Cantidad disponible: Más de 20 disponibles

    Condición: New.

  • Idioma: Inglés

    Editorial: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

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    Librería: Ria Christie Collections, Uxbridge, Reino UnidoRia Christie Collections

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    Condición: Nuevo

    EUR 149,42

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    Cantidad disponible: Más de 20 disponibles

    Condición: New. In English.

  • Idioma: Inglés

    Editorial: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

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    Librería: GreatBookPricesUK, Woodford Green, Reino UnidoGreatBookPricesUK

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    Condición: Usado - Como Nuevo

    EUR 150,63

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    Condición: As New. Unread book in perfect condition.

  • Idioma: Inglés

    Editorial: Institution of Engineering and Technology, GB, 2017

    1785613650 / 9781785613654

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    Librería: Rarewaves.com USA, London, LONDO, Reino UnidoRarewaves.com USA

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    Condición: Nuevo

    EUR 172,76

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    Hardback. Condición: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

  • Idioma: Inglés

    Editorial: Institution of Engineering and Technology, GB, 2017

    1785613650 / 9781785613654

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    Librería: Rarewaves USA United, HEBRON, KY, Estados Unidos de AmericaRarewaves USA United

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    Condición: Nuevo

    EUR 145,48

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    Hardback. Condición: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

  • Idioma: Inglés

    Editorial: INSTITUTION OF ENGINEERING & T, 2017

    1785613650 / 9781785613654

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    Librería: moluna, Greven, Alemaniamoluna

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    EUR 148,00

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    Gebunden. Condición: New. &Uumlber den AutorrnrnZhiLiang Zhang is a Professor at the Aero-Power Sci-Tech Center of Nanjing University of Aeronautics and Astronautics, China. His research interests include high-frequency power converters and renewable energy power con.

  • Idioma: Inglés

    Editorial: Inst of Engineering & Technology, 2017

    1785613650 / 9781785613654

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    Librería: Revaluation Books, Exeter, Reino UnidoRevaluation Books

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    Condición: Nuevo

    EUR 195,31

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    Cantidad disponible: 2 disponibles

    Hardcover. Condición: Brand New. 296 pages. 9.50x6.25x1.00 inches. In Stock.

  • Idioma: Inglés

    Editorial: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

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    Librería: Books Puddle, Woodside, NY, Estados Unidos de AmericaBooks Puddle

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    Condición: Nuevo

    EUR 234,72

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    Cantidad disponible: 1 disponible

    Condición: New.

  • Idioma: Inglés

    Editorial: Institution of Engineering and Technology, GB, 2017

    1785613650 / 9781785613654

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    Librería: Rarewaves.com UK, London, Reino UnidoRarewaves.com UK

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    Condición: Nuevo

    EUR 168,25

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    Hardback. Condición: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

  • Idioma: Inglés

    Editorial: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

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    Librería: Majestic Books, Hounslow, Reino UnidoMajestic Books

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    Condición: Nuevo

    EUR 244,76

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    Cantidad disponible: 1 disponible

    Condición: New.

  • Idioma: Inglés

    Editorial: Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

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    Librería: PBShop.store UK, Fairford, GLOS, Reino UnidoPBShop.store UK

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    EUR 137,89

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    HRD. Condición: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

  • Idioma: Inglés

    Editorial: Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

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    • Impresión bajo demanda

    Librería: PBShop.store US, Wood Dale, IL, Estados Unidos de AmericaPBShop.store US

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    EUR 145,31

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    HRD. Condición: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.