Idioma: Inglés
Publicado por Cambridge University Press, 2014
ISBN 10: 1107408717 ISBN 13: 9781107408715
Librería: California Books, Miami, FL, Estados Unidos de America
EUR 42,42
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Añadir al carritoCondición: New.
Idioma: Inglés
Publicado por Cambridge University Press, 2014
ISBN 10: 1107408717 ISBN 13: 9781107408715
Librería: Ria Christie Collections, Uxbridge, Reino Unido
EUR 36,98
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Añadir al carritoCondición: New. In.
Idioma: Inglés
Publicado por Cambridge University Press 2014-06-05, 2014
ISBN 10: 1107408717 ISBN 13: 9781107408715
Librería: Chiron Media, Wallingford, Reino Unido
EUR 35,93
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Añadir al carritoPaperback. Condición: New.
Idioma: Inglés
Publicado por Cambridge University Press, 2014
ISBN 10: 1107408717 ISBN 13: 9781107408715
Librería: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
EUR 44,84
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Añadir al carritoCondición: New.
Idioma: Inglés
Publicado por Cambridge University Press CUP, 2014
ISBN 10: 1107408717 ISBN 13: 9781107408715
Librería: Books Puddle, New York, NY, Estados Unidos de America
EUR 57,90
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Añadir al carritoCondición: New. pp. 358.
Idioma: Inglés
Publicado por Cambridge University Press, 2014
ISBN 10: 1107408717 ISBN 13: 9781107408715
Librería: Kennys Bookstore, Olney, MD, Estados Unidos de America
EUR 56,25
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Añadir al carritoCondición: New.
Idioma: Inglés
Publicado por Cambridge University Press, 2014
ISBN 10: 1107408717 ISBN 13: 9781107408715
Librería: AHA-BUCH GmbH, Einbeck, Alemania
EUR 58,29
Cantidad disponible: 1 disponibles
Añadir al carritoTaschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrication (back-end-of-the-line, BEOL). The 90nm node BEOL features copper (Cu) interconnects and dielectric materials with a low-dielectric constant (k) of about 3.0. However, for the next generations of 65nm node and beyond, evolutionary and revolutionary innovations in BEOL materials and processes are needed to fuel the continued, healthy growth of the semiconductor. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics.
Idioma: Inglés
Publicado por Cambridge University Press, 2014
ISBN 10: 1107408717 ISBN 13: 9781107408715
Librería: Revaluation Books, Exeter, Reino Unido
EUR 36,27
Cantidad disponible: 1 disponibles
Añadir al carritoPaperback. Condición: Brand New. 1st edition. 358 pages. 9.02x5.98x0.75 inches. In Stock. This item is printed on demand.
Idioma: Inglés
Publicado por Cambridge University Press, 2014
ISBN 10: 1107408717 ISBN 13: 9781107408715
Librería: THE SAINT BOOKSTORE, Southport, Reino Unido
EUR 41,29
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Añadir al carritoPaperback / softback. Condición: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.
Idioma: Inglés
Publicado por Cambridge University Press, 2014
ISBN 10: 1107408717 ISBN 13: 9781107408715
Librería: Biblios, Frankfurt am main, HESSE, Alemania
EUR 55,79
Cantidad disponible: 4 disponibles
Añadir al carritoCondición: New. PRINT ON DEMAND pp. 358.
Idioma: Inglés
Publicado por Cambridge University Press, Cambridge, 2014
ISBN 10: 1107408717 ISBN 13: 9781107408715
Librería: CitiRetail, Stevenage, Reino Unido
EUR 44,82
Cantidad disponible: 1 disponibles
Añadir al carritoPaperback. Condición: new. Paperback. In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrication (back-end-of-the-line, BEOL). The 90nm node BEOL features copper (Cu) interconnects and dielectric materials with a low-dielectric constant (k) of about 3.0. However, for the next generations of 65nm node and beyond, evolutionary and revolutionary innovations in BEOL materials and processes are needed to fuel the continued, healthy growth of the semiconductor. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
Idioma: Inglés
Publicado por Cambridge University Press, 2012
ISBN 10: 1107408717 ISBN 13: 9781107408715
Librería: moluna, Greven, Alemania
EUR 42,05
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconne.