Idioma: Inglés
Publicado por Academic Press, New York, 1981
ISBN 10: 0120029545 ISBN 13: 9780120029549
Librería: Xochi's Bookstore & Gallery, Truth or consequences, NM, Estados Unidos de America
EUR 15,96
Cantidad disponible: 1 disponibles
Añadir al carritoHardcover. Condición: Near Fine. No Jacket. 1st. 416pp.incl.index; HB brwn.w/gilt; slight rub w/clean,tight pgs. Reviews on the current status of MOS device physics & device processing technology. " illlus.
Librería: Dorley House Books, Inc., Hagerstown, MD, Estados Unidos de America
EUR 17,74
Cantidad disponible: 1 disponibles
Añadir al carritoHardcover. Condición: Near Fine. brown c w/gilt titles; 416 clean, unmarked pages/ndex. a technical publication focused on the foundational processes of silicon semiconductor manufacturing. It covers topics like impurity diffusion, oxidation, and crystal defects essential for creating high-power integrated circuits.
Idioma: Inglés
Publicado por Academic Press, New York, 1981
ISBN 10: 0120029545 ISBN 13: 9780120029549
Librería: Rivermead Books, Southampton., Reino Unido
Original o primera edición
EUR 15,94
Cantidad disponible: 1 disponibles
Añadir al carritoCloth. Condición: Very Good. No Jacket. First Edition. VG, hardback, dark brown cloth covers with gilt titles in black panel on spine, ex-Royal Aircraft Establishment Library, contents are clean and unmarked,octavo 416pp. weight 800g. Applied Solid State Science: Advances in Materials and Device research, supplement 2. Part A of 3 parts. Physics of MOS transistor; nonvolatile memories; properties of Silicon-on-Sapphire substrates, devices & integrated surfaces. Ex-Library.
Librería: Saul54, Lynn, MA, Estados Unidos de America
Original o primera edición
EUR 103,77
Cantidad disponible: 1 disponibles
Añadir al carritoHardcover. Condición: As New. 1st Edition. Academic Press Inc., 1981. X+416 pages. AsNew Hardcover formerly belonged to "Charles Stark Draper Laboratory, Inc.", looks Unused. 9.25"x6.1"x0.9". be42.