T�tulo: Simulation of Semiconductor Devices and Processes: Volume 6 (Simulation of Semiconductor Devices & Processes)
Editor: Springer
Fecha de publicaci�n: 1995
Idioma: Ingl�s
ISBN 10: 3211827366
ISBN 13: 9783211827369
Encuadernaci�n: Encuadernaci�n de tapa dura
Estado: New

Acerca de

Sinopsis

Numerical Modelling and Materials Characterisation for Integrated Micro Electro Mechanical Systems.- Fast and Accurate Aerial Imaging Simulation for Layout Printability Optimization.- Efficient and Rigorous 3D Model for Optical Lithography Simulation.- Application of the Two-dimensional Numerical Simulation for the Description of Semiconductor Gas Sensors.- Analysis of Piezoresistive Effects in Silicon Structures Using Multidimensional Process and Device Simulation.- Modeling of Magnetic-Field-Sensitive GaAs Devices Using 3D Monte Carlo Simulation.- Quasi Three-Dimensional Simulation of Heat Transport in Thermal-Based Microsensors.- Simulating Deep Sub-Micron Technologies: An Industrial Perspective.- An Improved Calibration Methodology for Modeling Advanced Isolation Technologies.- Algorithms for the Reduction of Surface Evolution Discretization Error.- Polygonal Geometry Reconstruction after Cellular Etching or Deposition Simulation.- A Data-Model for a Technology and Simulation Archive.- A Programmable Tool for Interactive Wafer-State Level Data Processing.- Layout Design Rule Generation with TCAD Tools for Manufacturing.- ALAMODE: A Layered Model Development Environment.- TCAD Optimization Based on Task-Level Framework Services.- Cellular Automata Simulation of GaAs-IMPATT-Diodes.- Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface States.- An Efficient Numerical Method to Solve the Time-Dependent Semiconductor Equations Including Trapped Charge.- Advances in Numerical Methods for Convective Hydrodynamic Model of Semiconductor Devices.- An Advanced Cellular Automaton Method with Interpolated Flux Scheme and its Application to Modeling of Gate Currents in Si MOSFETs.- Piezoresistance and the Drift-Diffusion Model in Strained Silicon.- A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors.- Ge Profile for Minimum Neutral Base Transit Time in Si/Si1-yGey Heteroj unction Bipolar Transistors.- Performance Optimization in Si/SiGe Heterostructure FETs.- On the Integral Representations of Electrical Characteristics in Si Devices.- Large Signal Frequency Domain Device Analysis Via the Harmonic Balance Technique.- A Method for Extracting the Threshold Voltage of MOSFETs Based on Current Components.- 2-D MOSFET Simulation by Self-Consistent Solution of the Boltzmann and Poisson Equations Using a Generalized Spherical Harmonic Expansion.- Ultra High Performance, Low Power 0.2 �m CMOS Microprocessor Technology and TCAD Requirements.- Viscoelastic Modeling of Titanium Silicidation.- Multidimensional Nonlinear Viscoelastic Oxidation Modeling.- Three-Dimensional Integrated Process Simulator: 3D-MIPS.- Effect of Process-Induced Mechanical Stress on Circuit Layout.- The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI.- Numerical and Analytical Modelling of Head Resistances of Diffused Resistors.- New Spreading Resistance Effect for Sub-0.50�m MOSFETs: Model and Simulation.- The Role of SEMATECH in Enabling Global TCAD Collaboration.- Three Dimensional Simulation for Sputter Deposition Equipment and Processes.- Comprehensive Reactor, Plasma, and Profile Simulator for Plasma Etch Processes.- Modeling the Wafer Temperature in a LPCVD Furnace.- Determination of Electronic States in Low Dimensional Heterostructure and Quantum Wire Devices.- An Exponentially Fitted Finite Element Scheme for Diffusion Process Simulation on Coarse Grids.- Achievement of Quantitatively Accurate Simulation of Ion-Irradiated Bipolar Power Devices.- Modeling of Substrate Bias Effect in Bulk and SOI SiGe-channel p-MOSFETs.- A Very Fast Three-Dimensional Impurity Profile Simulation Incorporating An Accumulated Diffusion Lenght and its Application to the Design of Power MOSFETs.- Recovery of Vectorial Fields and Currents in Multidimensional Simulation.- An Efficient Approach to Solving The Boltzmann Transport Equation in Ultra-fast Trans

Rese�a del editor

SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

"Sobre este t�tulo" puede pertenecer a otra edici�n de este libro.

Descripci�n de la librer�a

Hello! Ria Christie Collections is an online venture that was initially set up in 2012 to sell books. We do not have a physical high street store. We are professional online booksellers. We only sell brand new books in perfect condition that we source from various suppliers and the publishers. Primarily, our aim is to provide an excellent service to all our customers. We always work as a team to achieve this. Our other objectives are to: 1. Ensure that all our products reach their destination quickly in a safe and secure manner 2. Answer to all our customer queries within 24 hours 3. Ensure that our customers are happy with their purchases 4. Provide all the items at a competitive price 5. Always listen to our customers Ria Christie Collections is not a registered company. It is a Sole Trader venture. Other key information is shown below: Contact Person Name: Rakesh Luchmun (Mr) Storefront Name: Ria Christie Collections Place of Establishment Address: Suite B; ARUN House; ARUN Building Arundel Road Uxbridge UB8 2RR United Kingdom E-Mail Address: riachristie@hotmail.co.uk VAT Number: GB 160 5650 25 We always work hard and aim to comply with all of Abebooks Policies. If you have any issues, please do not hesitate to write to us whether before or after a purchase. We promise to reply to you promptly and, in any case, within 24 hours. Thank you kindly! Yours sincerely Mr Rakesh Luchmun (Founder) and the Ria Christie Collections Team

Ver la p�gina web de la librer�a

Informaci�n empresarial del vendedor

Ryefield Investments Limited
175 Pield Heath Road, Uxbridge, UB8 3NL, United Kingdom

Condiciones de venta y env�o

Condiciones de venta

All Returns and Refund are as per Abebooks policies.

Derecho a cancelaci�n

Condiciones de env�o

Orders usually ship within 2 business days. If your book order is heavy or oversized, we may contact you to let you know extra shipping is required. Thank you!

Tarifas de env�o de Reino Unido a Estados Unidos de America

Tarifas de env�o de Reino Unido a Estados Unidos de America
Cantidad del pedido	De 6 a 12 d�as h�biles	De 6 a 12 d�as h�biles
Primer art�culo	EUR 13.71	EUR 13.71

Los plazos de entrega los establecen los vendedores y var�an seg�n el transportista y la ubicaci�n. Los pedidos que pasan por la aduana pueden sufrir retrasos y los compradores son responsables de los aranceles o tarifas asociadas. Los vendedores pueden ponerse en contacto con usted en relaci�n con cargos adicionales para cubrir cualquier aumento en los costes de env�o de los art�culos.