Silicon Carbide 2004 - Materials, Processing and Devices: Volume 815 (MRS Proceedings) Dudley, Michael; Gouma, Perena; Kimoto, Tsunenobu; Neudeck, Philip G. and Saddow, Stephen E.

ISBN 10: 1558997652 ISBN 13: 9781558997653

Editorial: Cambridge University Press, 2004

Idioma: Ingl�s

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xlibrary 2004 hc no dj as issued withdrawn stamp in book/ on edge of pages clean text 322 pages::: I-7.

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T�tulo: Silicon Carbide 2004 - Materials, Processing and Devices: Volume 815 (MRS Proceedings) Dudley, Michael; Gouma, Perena; Kimoto, Tsunenobu; Neudeck, Philip G. and Saddow, Stephen E.
Editor: Cambridge University Press
Fecha de publicaci�n: 2004
Idioma: Ingl�s
ISBN 10: 1558997652
ISBN 13: 9781558997653
Encuadernaci�n: Encuadernaci�n de tapa dura
Estado: Used: Good

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

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Silicon carbide (SiC) is a wide-bandgap semiconductor that can operate at temperatures well above 300�C, where silicon cannot perform. In addition, due to a high thermal conductivity equal to copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high-power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems, and the impact of these devices is expected to significantly increase in the next several years. This book documents the most recent results on growth of bulk and epitaxial layers, physical and structural properties, process technology, and device development obtained since the 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003) held in Lyon, France. Extended defects in silicon carbide are highlighted. The nature of defects induced by forward biasing of bipolar devices, as well as methods to suppress the degradation, are addressed.

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