Druck auf Anfrage Neuware - Printed after ordering - After many decades, the scaling of silicon dioxide based field-effect transistors has reached insurmountable physical limits due unintentional high gate leakage currents for gate oxide thicknesses below 2 nm. The introduction of high-k metal gate stacks guaranteed the trend towards smaller transistor dimensions. The implementation of HfO2, as high-k dielectric, also lead to a substantial number of manufacturing and reliability challenges. The deterioration of the gate oxide properties under thermal and electric stress jeopardizes the circuit operation and hence needs to be comprehensively understood.As a starting point, 6T static random access memory cells were used to identify the different single device operating conditions. The strongest deterioration of the gate stack was found for nMOS devices under positive bias temperature instability (PBTI) stress, resulting in a severe threshold voltage shift and increased gate leakage current. A detailed investigation of physical origin and temperature and voltage dependency was done. The reliability issues were caused by the electron trapping into already existing HfO2 oxygen vacancies. The oxygen vacancies reside in different charge states depending on applied stress voltages. This in return also resulted in a strong threshold voltage and gate current relaxation after stress was cut off.The reliability assessment using constant voltage stress does not reflect realistic circuit operation which can result in a changed degradation behaviour. Therefore, the constant voltage stress measurement were extended by considering CMOS operational constraints, where it was found that the supply voltage frequently switches between the gate and drain terminal. The additional drain (off-state) bias lead to an increased Vt relaxation in comparison to zero bias voltage. The off-state influence strongly depended on the gate length and became significant for short channel devices.The influence of the off-state bias on the dielectric breakdown was studied and compared to the standard assessment methods. Different wear-out mechanisms for drain-only and alternating gate and drain stress were verified. Under drain-only stress, the dielectric breakdown was caused by hot carrier degradation. The lifetime was correlated with the device length and amount of subthreshold leakage.The gate oxide breakdown under alternating gate and o-state stress was caused by the continuous trapping and detrapping behaviour of high-k metal gate devices.

N� de ref. del art�culo 9783741208690

Contactar al vendedor

Denunciar este art�culo

Detalles bibliogr�ficos

T�tulo: Reliability of high-k / metal gate field-effect transistors considering circuit operational constraints
Editor: Books On Demand
Fecha de publicaci�n: 2016
Idioma: Ingl�s
ISBN 10: 3741208698
ISBN 13: 9783741208690
Encuadernaci�n: Taschenbuch
Estado: Neu
Dimensiones: 210�mil�metros de ancho por 148 de alto por 9 de largo
Peso: 191 gramos

Acerca de

Sinopsis

After many decades, the scaling of silicon dioxide based field-effect transistors has reached insurmountable physical limits due unintentional high gate leakage currents for gate oxide thicknesses below 2 nm. The introduction of high-k metal gate stacks guaranteed the trend towards smaller transistor dimensions. The implementation of HfO2, as high-k dielectric, also lead to a substantial number of manufacturing and reliability challenges. The deterioration of the gate oxide properties under thermal and electric stress jeopardizes the circuit operation and hence needs to be comprehensively understood. As a starting point, 6T static random access memory cells were used to identify the different single device operating conditions. The strongest deterioration of the gate stack was found for nMOS devices under positive bias temperature instability (PBTI) stress, resulting in a severe threshold voltage shift and increased gate leakage current. A detailed investigation of physical origin and temperature and voltage dependency was done. The reliability issues were caused by the electron trapping into already existing HfO2 oxygen vacancies. The oxygen vacancies reside in different charge states depending on applied stress voltages. This in return also resulted in a strong threshold voltage and gate current relaxation after stress was cut off. The reliability assessment using constant voltage stress does not reflect realistic circuit operation which can result in a changed degradation behaviour. Therefore, the constant voltage stress measurement were extended by considering CMOS operational constraints, where it was found that the supply voltage frequently switches between the gate and drain terminal. The additional drain (off-state) bias lead to an increased Vt relaxation in comparison to zero bias voltage. The off-state influence strongly depended on the gate length and became significant for short channel devices. The influence of the off-state bias on the dielectric break

Acerca del autor

Steve Kupke, studied physics at the Technical University Dresden from 2003 to 2009. After his master thesis he held several jobs as a scientist in Kazakhstan, Tajikistan and New Zealand. In 2011 he returned to Dresden to do his PhD in the field of microelectronics at the NamLab gGmbH, TU Dresden. Since then, he has built up his own company, named UNIPOLAR, for designing scientific themes and illustrations printed on fair-trade and organic clothes.

"Sobre este t�tulo" puede pertenecer a otra edici�n de este libro.

Descripci�n de la librer�a

Das Unternehmen AHA-BUCH GmbH: Seit der Gr�ndung von AHA-BUCH im Juli 2005 ist unser Hauptziel, zufriedenen Kunden so schnell und so preisg�nstig wie m�glich ihren B�cherwunsch zu erf�llen. Unsere Firma besch�ftigt 16 Mitarbeiter, die nur ein Ziel kennen: den Kunden und seine W�nsche! Auf �ber 3700 m2 Fl�che haben wir �ber 100.000 B�cher, Modernes Antiquariat und Spiele auf Lager.

Ver la p�gina web de la librer�a

Informaci�n empresarial del vendedor

AHA-BUCH GmbH
Garlebsen 48, Einbeck, 37574, Germany

Condiciones de venta y env�o

Condiciones de venta

T�rminos y Condiciones Generales e Informaci�n del Cliente / Pol�tica de Privacidad

I. T�rminos y Condiciones Generales

� 1 Disposiciones b�sicas

(1)Los siguientes t�rminos y condiciones se aplican a todos los contratos que celebre con nosotros como proveedor (AHA-BUCH GmbH) a trav�s de las plataformas de Internet AbeBooks y/o ZVAB. A menos que se acuerde lo contrario, se objetar� la inclusi�n de cualquiera de sus propios t�rminos y condiciones utilizados por usted.
(2)Un consumidor en el sentid...

M�s informaci�n

Derecho a cancelaci�n

Condiciones de env�o

Enviamos su pedido despu�s de recibirlos
para art�culos disponibles las �ltimas 24 horas,
para art�culos con suministro nocturno a m�s tardar 48 horas.
En caso de que necesitemos pedir un art�culo a nuestro proveedor, nuestro tiempo de env�o depende de la fecha de recepci�n de los art�culos, pero los art�culos se enviar�n el mismo d�a.

Nuestro objetivo es enviar los art�culos pedidos de la manera m�s r�pida, pero tambi�n m�s eficiente y segura a nuestros clientes.

Tarifas de env�o de Alemania a Estados Unidos de America

Tarifas de env�o de Alemania a Estados Unidos de America
Cantidad del pedido	De 30 a 40 d�as h�biles	De 7 a 14 d�as h�biles
Primer art�culo	EUR 60.96	EUR 70.96

Los plazos de entrega los establecen los vendedores y var�an seg�n el transportista y la ubicaci�n. Los pedidos que pasan por la aduana pueden sufrir retrasos y los compradores son responsables de los aranceles o tarifas asociadas. Los vendedores pueden ponerse en contacto con usted en relaci�n con cargos adicionales para cubrir cualquier aumento en los costes de env�o de los art�culos.

Informaci�n detallada sobre el vendedor