Radiation-Hardened SRAM Design for Space Applications (Paperback)
Idioma: inglés
Editorial: Shark Nail, 2026
- Tapa blanda
- Nuevo
Librería: AussieBookSeller, Truganina, VIC, AustraliaAussieBookSeller
Vendedor de IberLibro desde 22 de junio de 2007
Condición: Nuevo
EUR 34,54
Cantidad disponible: 1 disponible
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Paperback. Reliable memory systems are an essential part of spacecraft electronics, where semiconductor devices must operate under demanding radiation, power, reliability, and environmental conditions. Radiation-Hardened SRAM Design for Space Applications provides a focused introduction to the principles of static random-access memory (SRAM) design and the engineering approaches used to improve memory-cell resilience in radiation-intensive space environments. The book connects semiconductor device physics, digital circuit design, memory architecture, radiation effects, and low-power electronics within a structured technical framework.The book introduces the fundamental architecture and operating principles of SRAM, including memory-cell organization, data storage, read and write operations, stability, leakage, power consumption, and transistor-level circuit behavior. These concepts provide the foundation for understanding how conventional SRAM designs can be affected by environmental conditions encountered in space and why specialized circuit techniques are required for reliable operation.A central focus is placed on radiation effects in semiconductor memory. The text examines phenomena associated with energetic particles and their interaction with semiconductor devices, including transient disturbances, charge collection, soft errors, and other radiation-induced effects that can influence stored data and circuit operation. Readers gain an understanding of how radiation sensitivity can be related to transistor characteristics, circuit topology, stored charge, and memory-cell stability.The book further explores radiation-hardened-by-design approaches for SRAM. Topics such as redundant storage, feedback-based cell structures, enhanced data stability, disturbance tolerance, read and write robustness, and circuit-level radiation mitigation are considered within the broader framework of reliable memory design. The discussion also addresses important design trade-offs involving area, power consumption, performance, stability, and radiation tolerance.Low-power operation is considered alongside radiation resilience because spacecraft electronics often operate under stringent energy and reliability constraints. The book discusses leakage power, dynamic power, transistor sizing, circuit optimization, and memory performance from a general semiconductor-design perspective. These concepts help readers understand how circuit designers can evaluate competing requirements when developing SRAM architectures for demanding environments.The book also introduces analytical approaches for evaluating SRAM designs, including stability assessment, read and write behavior, power analysis, transient response, and reliability considerations. Emphasis is placed on established engineering principles rather than proprietary circuit implementations, specific fabrication technologies, or unsupported performance claims Radiation-Hardened SRAM Design for Space Applications explores SRAM architecture and circuit-level techniques for improving memory reliability in radiation-intensive space environments This item is printed on demand. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.…
N° de ref. del artículo 9781962116770
- Título
- Radiation-Hardened SRAM Design for Space Applications (Paperback)
- Autor
- Hendra Mallu
- Editorial
- Shark Nail
- Año de publicación
- 2026
- Estado
- new
- Encuadernación
- Paperback
- Idioma
- inglés
- ISBN 10
- 1962116778
- ISBN 13
- 9781962116770
Reliable memory systems are an essential part of spacecraft electronics, where semiconductor devices must operate under demanding radiation, power, reliability, and environmental conditions. Radiation-Hardened SRAM Design for Space Applications provides a focused introduction to the principles of static random-access memory (SRAM) design and the engineering approaches used to improve memory-cell resilience in radiation-intensive space environments. The book connects semiconductor device physics, digital circuit design, memory architecture, radiation effects, and low-power electronics within a structured technical framework.
The book introduces the fundamental architecture and operating principles of SRAM, including memory-cell organization, data storage, read and write operations, stability, leakage, power consumption, and transistor-level circuit behavior. These concepts provide the foundation for understanding how conventional SRAM designs can be affected by environmental conditions encountered in space and why specialized circuit techniques are required for reliable operation.
A central focus is placed on radiation effects in semiconductor memory. The text examines phenomena associated with energetic particles and their interaction with semiconductor devices, including transient disturbances, charge collection, soft errors, and other radiation-induced effects that can influence stored data and circuit operation. Readers gain an understanding of how radiation sensitivity can be related to transistor characteristics, circuit topology, stored charge, and memory-cell stability.
The book further explores radiation-hardened-by-design approaches for SRAM. Topics such as redundant storage, feedback-based cell structures, enhanced data stability, disturbance tolerance, read and write robustness, and circuit-level radiation mitigation are considered within the broader framework of reliable memory design. The discussion also addresses important design trade-offs involving area, power consumption, performance, stability, and radiation tolerance.
Low-power operation is considered alongside radiation resilience because spacecraft electronics often operate under stringent energy and reliability constraints. The book discusses leakage power, dynamic power, transistor sizing, circuit optimization, and memory performance from a general semiconductor-design perspective. These concepts help readers understand how circuit designers can evaluate competing requirements when developing SRAM architectures for demanding environments.
The book also introduces analytical approaches for evaluating SRAM designs, including stability assessment, read and write behavior, power analysis, transient response, and reliability considerations. Emphasis is placed on established engineering principles rather than proprietary circuit implementations, specific fabrication technologies, or unsupported performance claims
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