THE RELIABILITY OF STRAINED SI MOSFETS ON VARIED TECHNOLOGY PLATFORMS | Reliability of Advanced Si Technology. Este artículo no está disponible.
Idioma: inglés
Editorial: LAP LAMBERT Academic Publishing, 2010
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- Nuevo
Librería: preigu, Osnabrück, Alemaniapreigu
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THE RELIABILITY OF STRAINED SI MOSFETS ON VARIED TECHNOLOGY PLATFORMS | Reliability of Advanced Si Technology | Rimoon Agaiby | Taschenbuch | 176 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783838363325 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.
N° de ref. del artículo 101097458
- Título
- THE RELIABILITY OF STRAINED SI MOSFETS ON VARIED TECHNOLOGY PLATFORMS | Reliability of Advanced Si Technology
- Autor
- Rimoon Agaiby
- Editorial
- LAP LAMBERT Academic Publishing
- Año de publicación
- 2010
- Estado
- Neu
- Encuadernación
- Taschenbuch
- Idioma
- inglés
- ISBN 10
- 3838363329
- ISBN 13
- 9783838363325
- Peso del artículo
- 280 gramos
- Dimensiones
- 220 x 150 x 12 mm
- Catálogos de vendedores
- Bücher
The reliability of strained Si devices on several technology platforms has been investigated, highlighting the advantages and disadvantages in each case. The devices had biaxial strain induced through the use of a SiGe strain relaxed buffer or uniaxial strain induced through the use of strained nitride liners or stress memorisation. Since there is much literature demonstrating the benefits of using strain engineering to enhance drive current and speed, the aim of this thesis has been to present several aspects of device reliability that have not been studied previously and to demonstrate the need for significantly more research.
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Reseña del editor
The reliability of strained Si devices on several technology platforms has been investigated, highlighting the advantages and disadvantages in each case. The devices had biaxial strain induced through the use of a SiGe strain relaxed buffer or uniaxial strain induced through the use of strained nitride liners or stress memorisation. Since there is much literature demonstrating the benefits of using strain engineering to enhance drive current and speed, the aim of this thesis has been to present several aspects of device reliability that have not been studied previously and to demonstrate the need for significantly more research.
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