Metal Oxides for Non-volatile Memory: Materials, Technology and Applications. Este artículo no está disponible.
Idioma: inglés
Editorial: Elsevier, 2022
- Tapa blanda
- Nuevo

Librería: Majestic Books, Hounslow, Reino UnidoMajestic Books
Vendedor de IberLibro desde 19 de enero de 2007
Condición: Nuevo
EUR 230,86
N° de ref. del artículo 389491864
- Título
- Metal Oxides for Non-volatile Memory: Materials, Technology and Applications
- Autor
- Valov
- Editorial
- Elsevier
- Año de publicación
- 2022
- Estado
- New
- Encuadernación
- Encuadernación de tapa blanda
- Idioma
- inglés
- ISBN 10
- 012814629X
- ISBN 13
- 9780128146293
Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory.
Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems.
- Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more
- Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE
- Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology
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Acerca del autor
Ilia Valov is a Senior Scientist at the Peter Gruenberg Institute, Electronic Materials (IEM), Julich, Germany.
Prof. Dr. Stefan Tappertzhofen studied electrical engineering and information technology at RWTH Aachen University and received his PhD in 2014. From 2014 – 2016 he worked as research associate at the Department of Engineering, University of Cambridge. Afterwards, he worked as a research and development manager for semiconductor measurement technology at aixACCT Systems. Since 2020 he is Professor in Micro- and Nanoelectronics at TU Dortmund University. His research is focused on novel multi-functional materials, memristive systems and circuits, and quantum- and nanotechnology.
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