Gate Dielectrics and MOS ULSIs: Principles, Technologies and Applications (Springer Series in Electronics and Photonics)

I. P. Kaminow T. Sugano Takashi Hori

ISBN 10: 3540631828 ISBN 13: 9783540631828

Editorial: Springer, 1997

Idioma: Ingl�s

Condici�n: Usado - Bueno Encuadernaci�n de tapa blanda

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Descripci�n

May have limited writing in cover pages. Pages are unmarked. ~ ThriftBooks: Read More, Spend Less 1.5.

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Detalles bibliogr�ficos

T�tulo

Gate Dielectrics and MOS ULSIs: Principles, Technologies and Applications (Springer Series in Electronics and Photonics)

Editor

Springer

Fecha de publicaci�n

1997

Idioma

Ingl�s

ISBN 10

3540631828

ISBN 13

9783540631828

Encuadernaci�n

Paperback

Estado

Very Good

Estado de la sobrecubierta

No Jacket

Cat�logos de vendedores

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Sinopsis

Gate Dielectrics focusses on dielectric films satisfying the superior quality gate dielectric even in large-scale integration. The information presented is rather up to date with regard to nanometer-range ultrathin gate-dielectric films, which are indispensible for submicrometer ULSIs.

De la contraportada

Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.

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