Design of Read/Write Circuits for Memristor-Based Memory Arrays. Este artículo no está disponible.
Idioma: inglés
Editorial: LAP LAMBERT Academic Publishing, 2015
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Librería: preigu, Osnabrück, Alemaniapreigu
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Design of Read/Write Circuits for Memristor-Based Memory Arrays | Mohamed Elshamy (u. a.) | Taschenbuch | 100 S. | Englisch | 2015 | LAP LAMBERT Academic Publishing | EAN 9783659783135 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.
N° de ref. del artículo 104172689
- Título
- Design of Read/Write Circuits for Memristor-Based Memory Arrays
- Autor
- Mohamed Elshamy (u. a.)
- Editorial
- LAP LAMBERT Academic Publishing
- Año de publicación
- 2015
- Estado
- Neu
- Encuadernación
- Taschenbuch
- Idioma
- inglés
- ISBN 10
- 3659783137
- ISBN 13
- 9783659783135
- Peso del artículo
- 167 gramos
- Dimensiones
- 220 x 150 x 7 mm
- Catálogos de vendedores
- Bücher
Emerging non-volatile universal memory technology is vital for providing the huge storage capabilities required by the nano-computing facilities. The recently found memristor, ”the missing fourth circuit element”, is a potential candidate for the next-generation memory and has received extra attention in the last few years. In this book, a literature review of different physical realizations of the memristor is discussed. Following that, a comparison between two of the most promising physical realizations is conducted. Besides, memristor-based memory Read/Write circuit design considerations are demonstrated. Current literatures show destructive reading issue when using the memristor as a memory element. This work is targeting at solving this issue by providing three novel Read/Write circuit designs to facilitate the reading and writing operation of the memristor device. The proposed circuits exhibit lower power consumption and less delay when compared to recently published Read/Write circuits. In addition, two of the proposed circuits have the advantage of non-destructive successive reading cycles capability as well as occupying small layout area.
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Reseña del editor
Emerging non-volatile universal memory technology is vital for providing the huge storage capabilities required by the nano-computing facilities. The recently found memristor, ”the missing fourth circuit element”, is a potential candidate for the next-generation memory and has received extra attention in the last few years. In this book, a literature review of different physical realizations of the memristor is discussed. Following that, a comparison between two of the most promising physical realizations is conducted. Besides, memristor-based memory Read/Write circuit design considerations are demonstrated. Current literatures show destructive reading issue when using the memristor as a memory element. This work is targeting at solving this issue by providing three novel Read/Write circuit designs to facilitate the reading and writing operation of the memristor device. The proposed circuits exhibit lower power consumption and less delay when compared to recently published Read/Write circuits. In addition, two of the proposed circuits have the advantage of non-destructive successive reading cycles capability as well as occupying small layout area.
“Acerca de” puede pertenecer a otra edición de este título.