T�tulo: Compact Modeling of the RF and Noise Behavior of Multiple-Gate Mosfets
Editor: VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG
Fecha de publicaci�n: 2013
Idioma: Ingl�s
ISBN 10: 3843304726
ISBN 13: 9783843304726
Encuadernaci�n: Encuadernaci�n de tapa blanda
Estado: New

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Sinopsis

The nanoelectronics world is moving forward at incredible speed, and technology keeps improving overnight. One can no longer afford to spend months or even years evaluating a future technological node, thus the need for a robust evaluation system has arisen. Numerical ways of modeling the new device architectures, apart from precision, offer very little in terms of performance, and are being replaced by new analytical tools, focus on providing exactly that - speed and accuracy. This work has been conceived to cover precisely these aspects. The models described here are physical models, with very few adjustment parameters, that are usually replaceable with values extracted from experimental measurements. They have the advantage of being easily incorporated into circuit simulators, which allow designers to unleash the full capabilities of the design software to create new devices and applications.

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