Bulk-Driven Circuit Techniques for CMOS FDSOI Processes

Idioma: inglés

Editorial: Springer Nature Switzerland, Springer Nature Switzerland Jul 2025, 2025

3031851137 / 9783031851131

Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.

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This item is printed on demand - it takes 3-4 days longer - Neuware -In the contemporary technology landscape dominated by digital-centric systems and applications, the significance of analog front-end signal processing remains indispensable. The precision and performance of critical analog, mixed-signal or mm-wave components such as low-noise amplifiers, equalizers, and data converters are fundamentally determined by technological parameters, such as transconductance, DC gain, device matching, linearity, and timing accuracy, among others.Enhancing these parameters through intrinsic design improvements presents a significant challenge and becomes infeasible beyond certain limits with state-of-the-art circuit design techniques. As the performance of CMOS transistors is fundamentally constrained, foreground or background calibration schemes are commonly employed to mitigate the limitations of MOS devices. However, these constraints can be effectively addressed through the implementation of active and passive bulk-driven circuits enabled by silicon-on-insulator (SOI) CMOS technologies. Fully-Depleted Silicon-on-Insulator (FD-SOI) CMOS technologies offer superior transistor characteristics compared to standard bulk CMOS technology, providing enhanced electrical performance, improved power efficiency, and better scalability.This book offers a comprehensive analysis of FD-SOI CMOS technology, presenting key innovations in design methodologies and circuit implementations adopting bulk-biasing techniques across analog, digital, mixed-signal, and mmWave circuits and systems. It addresses critical transistor limitations, including finite transistor gain, offset, mismatch, noise and linearity, among others.The authors provide detailed technical insights, mathematical modelling, design approaches and circuit realizations covering circuit advances using both static and dynamic transistor body-biasing techniques. Emphasis is placed on overcoming state-of-the-art circuit limitations such as finite DC gain, bandwidth, matching/accuracy and power efficiency. These performance metrics are rigorously investigated through mathematical modelling, validated through simulation and experimentally demonstrated using both dynamic and static body-biasing architectures. 276 pp. Englisch.…

N° de ref. del artículo 9783031851131

Título
Bulk-Driven Circuit Techniques for CMOS FDSOI Processes
Autor
Friedel Gerfers
Editorial
Springer Nature Switzerland, Springer Nature Switzerland Jul 2025
Año de publicación
2025
Estado
Neu
Encuadernación
Buch
Idioma
inglés
ISBN 10
3031851137
ISBN 13
9783031851131
Peso del artículo
580 gramos
Dimensiones
241x160x21 mm

BuchWeltWeit Ludwig Meier e.K.

Bergisch Gladbach, Alemania

Vendedor de 5 estrellas

Vendedor de IberLibro desde 11 de enero de 2012

Tarifas de envío de Alemania a Estados Unidos de America

ArtículoDe 5 a 15 días hábilesDe 5 a 15 días hábiles
Primer artículoEUR 23,00EUR 23,00
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BuchWeltWeit Ludwig Meier e.K.

Alemania