This book focuses on the optical characterization of wide band gap semiconductor micro-nano structures and advanced optoelectronic devices including GaN-based laser diodes, GaN-based micro-LEDs, ZnO-based micro-lasers, Ga2O3-based deep UV photodetectors, etc., written by leading scholars in the field from the perspective of applied research and development of advanced optoelectronic devices.
This book consists of 12 chapters, mainly presenting the authors’ own new findings, new theoretical models and experimental results, which can benefit researchers, engineers and postgraduate students in the field of semiconductor optoelectronics.
"Sinopsis" puede pertenecer a otra edición de este libro.
Prof. Shijie Xu is currently a distinguished professor in Department of Optical Science and Engineering, Fudan University. Before he joined Fudan University, he worked as a professor with tenure in Department of Physics, The University of Hong Kong. Prof. Xu is interested in luminescence and related phenomena, especially effects of carrier localization and many-body interactions in internal luminescence and relevant optoelectronic processes in wide band gap semiconducts and other solids. He has authored over 170 scientific articles and letters with significant impact in the fields.
This book focuses on the optical characterization of wide band gap semiconductor micro-nano structures and advanced optoelectronic devices including GaN-based laser diodes, GaN-based micro-LEDs, ZnO-based micro-lasers, Ga2O3-based deep UV photodetectors, etc., written by leading scholars in the field from the perspective of applied research and development of advanced optoelectronic devices.
This book consists of 12 chapters, mainly presenting the authors’ own new findings, new theoretical models and experimental results, which can benefit researchers, engineers and postgraduate students in the field of semiconductor optoelectronics.
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Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book focuses on the optical characterization of wide band gap semiconductor micro-nano structures and advanced optoelectronic devices including GaN-based laser diodes, GaN-based micro-LEDs, ZnO-based micro-lasers, Ga2O3-based deep UV photodetectors, etc., written by leading scholars in the field from the perspective of applied research and development of advanced optoelectronic devices.This book consists of 12 chapters, mainly presenting the authors own new findings, new theoretical models and experimental results, which can benefit researchers, engineers and postgraduate students in the field of semiconductor optoelectronics. 373 pp. Englisch. Nº de ref. del artículo: 9789819519279
Cantidad disponible: 2 disponibles
Librería: preigu, Osnabrück, Alemania
Buch. Condición: Neu. Optical Characterization of Microstructures and Optoelectronic Devices Based on Wide Band Gap Semiconductors | Shijie Xu | Buch | xii | Englisch | 2026 | Springer | EAN 9789819519279 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand. Nº de ref. del artículo: 134502515
Cantidad disponible: 5 disponibles
Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemania
Buch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Wide band gap semiconductor laser technology and characterization.- Growth and characterization of GaN-based lasers on silicon substrates.- Efficiency characterization of GaN-based LEDs.- Preparation and optoelectronic properties of GaN-based Micro-LEDs.- Key factors restricting the external quantum efficiency of GaN-based micro-LEDsand solutions.- Growth and optical characterization of non-polar and semi-polar GaN-based LEDs.- Construction and characterization of ZnO micro-nano lasers.- Ga2O3 solar blind deep ultraviolet detectors.- Optoelectronic properties and characterization of gallium-doped ZnO.- Optoelectronic process characterization of localized carriers in semiconductors and photovoltaic devices.- Photoluminescence properties and characterization of InGaN/GaN nanowire quantum dots.- Characterization of nonlinear optical properties of ZnO single crystals and micro-nano structures.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 388 pp. Englisch. Nº de ref. del artículo: 9789819519279
Cantidad disponible: 1 disponibles
Librería: Books Puddle, New York, NY, Estados Unidos de America
Condición: New. Nº de ref. del artículo: 26405663794
Cantidad disponible: 4 disponibles
Librería: AHA-BUCH GmbH, Einbeck, Alemania
Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book focuses on the optical characterization of wide band gap semiconductor micro-nano structures and advanced optoelectronic devices including GaN-based laser diodes, GaN-based micro-LEDs, ZnO-based micro-lasers, Ga2O3-based deep UV photodetectors, etc., written by leading scholars in the field from the perspective of applied research and development of advanced optoelectronic devices.This book consists of 12 chapters, mainly presenting the authors own new findings, new theoretical models and experimental results, which can benefit researchers, engineers and postgraduate students in the field of semiconductor optoelectronics. Nº de ref. del artículo: 9789819519279
Cantidad disponible: 1 disponibles
Librería: Majestic Books, Hounslow, Reino Unido
Condición: New. Print on Demand. Nº de ref. del artículo: 408571885
Cantidad disponible: 4 disponibles
Librería: Biblios, Frankfurt am main, HESSE, Alemania
Condición: New. PRINT ON DEMAND. Nº de ref. del artículo: 18405663800
Cantidad disponible: 4 disponibles