Research on the Radiation Effects and Compact Model of SiGe HBT - Tapa blanda

Sinopsis

Introduction.- Ionization damage in SiGe HBT.- Displacement damage with swift heavy ions in SiGe HBT.- Single-event transient induced by pulse laser microbeam in SiGe HBT.- Small-signal equivalent circuit of SiGe HBT based on the distributed effects.- Parameter extraction of SiGe HBT models.- Conclusion.

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