Variation-Aware Advanced CMOS Devices and SRAM: 56 (Springer Series in Advanced Microelectronics) - Tapa blanda
Sinopsis
This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM.
The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development.This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.
"Sinopsis" puede pertenecer a otra edición de este libro.
Acerca del autor
Prof. Changhwan Shin is an Assistant Professor in School of Electrical and Computer Engineering in University of Seoul. Prof. Shin is a graduate of Korea University (BE) and University of California Berkeley (Ph.D). Also, he is Technical Committee Members for IEEE SOI Conference and European Solid-State Device Research Conference (ESSDERC). His research activities cover Electronic Devices and Integrated Circuits; Advanced electronic device architecture for various types of System-on-Chip(SoC) memory and logic devices/ All-in-one Variability Analysis for Nanometer-scale Electronic Devices/ Post-Silicon Technology (CNT, Graphene) & Bio-applications/ Device-and-Circuit Co-optimization: "Low-Level" Digital/Analog Circuit Design Methodology Development/ Programmable Chip Development using Advanced Electronic Devices.
De la contraportada
This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM.
The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM."Sobre este título" puede pertenecer a otra edición de este libro.
Otras ediciones populares con el mismo título
Resultados de la búsqueda para Variation-Aware Advanced CMOS Devices and SRAM: 56...
Imagen del vendedor
Variation-Aware Advanced CMOS Devices and SRAM
Publicado por
Springer Netherlands Jun 2018, 2018
ISBN 10: 9402413901
ISBN 13: 9789402413908
Nuevo
Taschenbuch
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
Calificación del vendedor: 5 de 5 estrellas
Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM. 148 pp. Englisch. Nº de ref. del artículo: 9789402413908
Comprar nuevo
EUR 53,49
Gastos de envío:
EUR 23,00
De Alemania a Estados Unidos de America
Cantidad disponible: 2 disponibles
Imagen de archivo
Variation-Aware Advanced CMOS Devices and SRAM (Springer Series in Advanced Microelectronics)
Librería: Books Puddle, New York, NY, Estados Unidos de America
Calificación del vendedor: 4 de 5 estrellas
Condición: New. pp. 140. Nº de ref. del artículo: 26381094547
Comprar nuevo
EUR 73,90
Gastos de envío:
EUR 3,44
A Estados Unidos de America
Cantidad disponible: 4 disponibles
Imagen de archivo
Variation-Aware Advanced CMOS Devices and SRAM (Springer Series in Advanced Microelectronics)
Impresión bajo demandaLibrería: Majestic Books, Hounslow, Reino Unido
Calificación del vendedor: 4 de 5 estrellas
Condición: New. Print on Demand pp. 140. Nº de ref. del artículo: 381728076
Comprar nuevo
EUR 76,97
Gastos de envío:
EUR 7,42
De Reino Unido a Estados Unidos de America
Cantidad disponible: 4 disponibles
Imagen de archivo
Variation-Aware Advanced CMOS Devices and SRAM (Springer Series in Advanced Microelectronics)
Impresión bajo demandaLibrería: Biblios, Frankfurt am main, HESSE, Alemania
Calificación del vendedor: 4 de 5 estrellas
Condición: New. PRINT ON DEMAND pp. 140. Nº de ref. del artículo: 18381094553
Comprar nuevo
EUR 78,03
Gastos de envío:
EUR 9,95
De Alemania a Estados Unidos de America
Cantidad disponible: 4 disponibles
Imagen del vendedor
Variation-Aware Advanced CMOS Devices and SRAM
Publicado por
Springer Netherlands, 2018
ISBN 10: 9402413901
ISBN 13: 9789402413908
Nuevo
Tapa blanda
Librería: moluna, Greven, Alemania
Calificación del vendedor: 4 de 5 estrellas
Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Offers an insightful overview of the key techniques in variation-immune CMOS device designs Covers the main contemporary issues in CMOS device design, such as how to overcome process-induced random variations including line-edge-roughness, random. Nº de ref. del artículo: 458817578
Comprar nuevo
EUR 48,37
Gastos de envío:
EUR 48,99
De Alemania a Estados Unidos de America
Cantidad disponible: Más de 20 disponibles
Imagen de archivo
Variation-Aware Advanced CMOS Devices and SRAM (Springer Series in Advanced Microelectronics)
Librería: Revaluation Books, Exeter, Reino Unido
Calificación del vendedor: 5 de 5 estrellas
Paperback. Condición: Brand New. reprint edition. 140 pages. 9.25x6.10x0.34 inches. In Stock. Nº de ref. del artículo: zk9402413901
Comprar nuevo
EUR 88,84
Gastos de envío:
EUR 14,27
De Reino Unido a Estados Unidos de America
Cantidad disponible: 1 disponibles
Imagen del vendedor
Variation-Aware Advanced CMOS Devices and SRAM
Publicado por
Springer Netherlands, Springer Netherlands Jun 2018, 2018
ISBN 10: 9402413901
ISBN 13: 9789402413908
Nuevo
Taschenbuch
Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemania
Calificación del vendedor: 5 de 5 estrellas
Taschenbuch. Condición: Neu. Neuware -This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM.The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development.This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 148 pp. Englisch. Nº de ref. del artículo: 9789402413908
Comprar nuevo
EUR 53,49
Gastos de envío:
EUR 60,00
De Alemania a Estados Unidos de America
Cantidad disponible: 2 disponibles
Imagen del vendedor
Variation-Aware Advanced CMOS Devices and SRAM
Publicado por
Springer Netherlands, Springer Netherlands, 2018
ISBN 10: 9402413901
ISBN 13: 9789402413908
Nuevo
Taschenbuch
Librería: AHA-BUCH GmbH, Einbeck, Alemania
Calificación del vendedor: 5 de 5 estrellas
Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development.This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM. Nº de ref. del artículo: 9789402413908
Comprar nuevo
EUR 56,98
Gastos de envío:
EUR 61,32
De Alemania a Estados Unidos de America
Cantidad disponible: 1 disponibles
Imagen del vendedor
Variation-Aware Advanced CMOS Devices and SRAM
Publicado por
Springer Netherland, 2018
ISBN 10: 9402413901
ISBN 13: 9789402413908
Nuevo
Taschenbuch
Librería: preigu, Osnabrück, Alemania
Calificación del vendedor: 5 de 5 estrellas
Taschenbuch. Condición: Neu. Variation-Aware Advanced CMOS Devices and SRAM | Changhwan Shin | Taschenbuch | vii | Englisch | 2018 | Springer Netherland | EAN 9789402413908 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. Nº de ref. del artículo: 114240425
Comprar nuevo
EUR 50,40
Gastos de envío:
EUR 70,00
De Alemania a Estados Unidos de America
Cantidad disponible: 5 disponibles
Imagen de archivo
Variation-Aware Advanced CMOS Devices and SRAM (Springer Series in Advanced Microelectronics, 56)
Librería: Mispah books, Redhill, SURRE, Reino Unido
Calificación del vendedor: 4 de 5 estrellas
Paperback. Condición: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book. Nº de ref. del artículo: ERICA79794024139016
Comprar nuevo
EUR 104,61
Gastos de envío:
EUR 28,53
De Reino Unido a Estados Unidos de America
Cantidad disponible: 1 disponibles