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Sinopsis
These volumes seek to reflect the changes in the field of semiconductor devices. Advances in materials and technology of devices is reviewed. They present current state of art devices based on GaN, SiGc, llgCdTc, quantum well structures of TPT-V and TT-VT materials as well as other issues. In all, 74 invited and 185 contributed articles are presented and classified in 10 major areas.
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Reseña del editor
These volumes seek to reflect the changes in the field of semiconductor devices. Advances in materials and technology of devices is reviewed. They present current state of art devices based on GaN, SiGc, llgCdTc, quantum well structures of TPT-V and TT-VT materials as well as other issues. In all, 74 invited and 185 contributed articles are presented and classified in 10 major areas.
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