In low-power-high-speed electronic circuits, devices with steeper characteristics are required. The device's speed increases with steeper IV characteristics, and low power is achieved through operating the device in the subthreshold region. The measurement of currents in the subthreshold region is a big challenge. To achieve high switching, we need to propose a new device with the combined advantages of FinFET and TFET. This thesis proposed a hybrid device with an SS value < 25 mV/Dec. Synopsis Centaurus TCAD is used in this thesis for device modelling and characterisation.
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Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In low-power-high-speed electronic circuits, devices with steeper characteristics are required. The device's speed increases with steeper IV characteristics, and low power is achieved through operating the device in the subthreshold region. The measurement of currents in the subthreshold region is a big challenge. To achieve high switching, we need to propose a new device with the combined advantages of FinFET and TFET. This thesis proposed a hybrid device with an SS value < 25 mV/Dec. Synopsis Centaurus TCAD is used in this thesis for device modelling and characterisation. Nº de ref. del artículo: 9786208225315
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Taschenbuch. Condición: Neu. Device modelling and characterisation of Hybrid devices | Hybrid Device for High Speed and Low Power Applications | Ajaykumar Dharmireddy (u. a.) | Taschenbuch | Englisch | 2024 | LAP LAMBERT Academic Publishing | EAN 9786208225315 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Nº de ref. del artículo: 130391265
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Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In low-power-high-speed electronic circuits, devices with steeper characteristics are required. The device's speed increases with steeper IV characteristics, and low power is achieved through operating the device in the subthreshold region. The measurement of currents in the subthreshold region is a big challenge. To achieve high switching, we need to propose a new device with the combined advantages of FinFET and TFET. This thesis proposed a hybrid device with an SS valueVDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 140 pp. Englisch. Nº de ref. del artículo: 9786208225315
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