Statistical Circuit Simulations: From ‘Atomistic’ Compact Models to Statistical Standard Cell Characterisation - Tapa blanda

Sinopsis

This work describes the development and application of statistical circuit simulation methodologies to analyse digital circuits subject to intrinsic parameter fluctuations. The specific nature of intrinsic parameter fluctuations are discussed, and the crucial importance to the semiconductor industry of developing design tools which accurately account for their effects are explained. Current work in the area is reviewed, and three important factors are made clear: any statistical circuit simulation methodology must be based on physically correct, predictive models of device variability; the statistical compact models describing device operation must be characterised for accurate transient analysis of circuits; analysis must be carried out on realistic circuit components.

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