THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM): Semiconductor memory - Tapa blanda

KARANJA, JOSEPH

 
9783844301472: THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM): Semiconductor memory
Tapa blanda
ISBN 10: 384430147X ISBN 13: 9783844301472
Editorial: LAP LAMBERT Academic Publishing, 2011

Sinopsis

Phase Change Random Access Memory (PCM) is one of the most optimized candidates for the next generation non-volatile memory due to its fast operation speed, high scalability, low power operation and fabrication costs. The transition from the amorphous to the crystalline phase is induced by heating the material above its crystallization temperature for a long enough time, and the switching back to the amorphous phase is realized by melting and quenching the material fast enough that it solidifies in the amorphous state. In this book the electrical and optical properties of various tin selenide compound alloys has been reported. All the alloys have shown high sheet resistance at room temperature and low sheet resistance during annealing. This interprets that the samples were amorphous during deposition and changed to crystalline during annealing. Increase in tin concentration reduced the crystallization temperature. The PCM was fabricated had high crystalline temperature, low crystallization temperature and a wide band gap.

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Reseña del editor

Phase Change Random Access Memory (PCM) is one of the most optimized candidates for the next generation non-volatile memory due to its fast operation speed, high scalability, low power operation and fabrication costs. The transition from the amorphous to the crystalline phase is induced by heating the material above its crystallization temperature for a long enough time, and the switching back to the amorphous phase is realized by melting and quenching the material fast enough that it solidifies in the amorphous state. In this book the electrical and optical properties of various tin selenide compound alloys has been reported. All the alloys have shown high sheet resistance at room temperature and low sheet resistance during annealing. This interprets that the samples were amorphous during deposition and changed to crystalline during annealing. Increase in tin concentration reduced the crystallization temperature. The PCM was fabricated had high crystalline temperature, low crystallization temperature and a wide band gap.

Biografía del autor

Joseph Muna Karanja holds B.Ed(science)in physics and maths from Egerton University,Kenya and Msc(Electronics) specializing in semiconductor electronics from Kenyatta University, Kenya. He has teaching experience in various University in Kenya notably University of Nairobi and Kenyatta University both from Kenya.

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Editorial
LAP LAMBERT Academic Publishing
Año de publicación
2011
Idioma
Inglés
ISBN 10 
384430147X
ISBN 13 
9783844301472
Encuadernación
Tapa blanda
Número de páginas
92
Contacto del fabricante
no disponible
Persona responsable
no disponible