Artículos relacionados a Controlled Growth of GaN Columns and 3D Core-Shell...
Comprar nuevo
Ver este artículo
EUR 41,90
EUR 23,00 gastos de envío desde Alemania a Estados Unidos de America
Destinos, gastos y plazos de envíoResultados de la búsqueda para Controlled Growth of GaN Columns and 3D Core-Shell...
Imagen del vendedor
Controlled Growth of GaN Columns and 3D Core-Shell LEDs by MOVPE
Impresión bajo demandaLibrería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Alemania
Calificación del vendedor: 5 de 5 estrellas
Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -GaN three-dimensional columnar core-shell LEDs are considered to be one of the promising candidates for prospective solid state lighting. In comparison to conventional planar layer LEDs, columnar core-shell LEDs have many advantages. For instance, in a columnar GaN coreshell LED structure the InGaN/GaN MQW wraps around the column, therefore the light emitting area can be enormously increased. This is the main driving force behind the intense investigation of nanowire and micro-columnar LEDs. In addition, because of the increased area of the MQW, the internal quantum efficiency may be improved by a reduction of the local carrier density, mitigating the efficiency droop. Besides, due to the reduced influence of thermal and lattice mismatch between the substrate and columns, dislocation-free GaN column arrays can be achieved on large area substrates.The main contribution of the present work is the controlled growth of GaN columns and core-shell LEDs by metal-organic vapor-phase expitaxy. The growth conditions which lead to vertical growth of N-polar and Ga-polar GaN columns are systematically investigated. The causes of the vertical growth are explained by surface processes under appropriate conditions for both polarities. Quantitative discussions of growth kinetics of GaN columns are an important feature in this work. The difficulties and the strategies of the MQW and p-GaN shell growth on high aspect ratio GaN columns are presented in detail. 186 pp. Englisch. Nº de ref. del artículo: 9783736990005
Gastos de envío:
EUR 23,00
De Alemania a Estados Unidos de America
Destinos, gastos y plazos de envío
Cantidad disponible: 2 disponibles
Imagen del vendedor
Controlled Growth of GaN Columns and 3D Core-Shell LEDs by MOVPE
Impresión bajo demandaLibrería: moluna, Greven, Alemania
Calificación del vendedor: 4 de 5 estrellas
Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. KlappentextrnrnGaN three-dimensional columnar core-shell LEDs are considered to be one of the promising candidates for prospective solid state lighting. In comparison to conventional planar layer LEDs, columnar core-shell LEDs have many advantag. Nº de ref. del artículo: 81440120
Gastos de envío:
EUR 48,99
De Alemania a Estados Unidos de America
Destinos, gastos y plazos de envío
Cantidad disponible: Más de 20 disponibles
Imagen del vendedor
Controlled Growth of GaN Columns and 3D Core-Shell LEDs by MOVPE
Publicado por
Cuvillier, Cuvillier Jun 2015, 2015
ISBN 10: 3736990006
ISBN 13: 9783736990005
Nuevo
Taschenbuch
Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemania
Calificación del vendedor: 5 de 5 estrellas
Taschenbuch. Condición: Neu. Neuware -GaN three-dimensional columnar core-shell LEDs are considered to be one of the promising candidates for prospective solid state lighting. In comparison to conventional planar layer LEDs, columnar core-shell LEDs have many advantages. For instance, in a columnar GaN coreshell LED structure the InGaN/GaN MQW wraps around the column, therefore the light emitting area can be enormously increased. This is the main driving force behind the intense investigation of nanowire and micro-columnar LEDs. In addition, because of the increased area of the MQW, the internal quantum efficiency may be improved by a reduction of the local carrier density, mitigating the efficiency droop. Besides, due to the reduced influence of thermal and lattice mismatch between the substrate and columns, dislocation-free GaN column arrays can be achieved on large area substrates.The main contribution of the present work is the controlled growth of GaN columns and core-shell LEDs by metal-organic vapor-phase expitaxy. The growth conditions which lead to vertical growth of N-polar and Ga-polar GaN columns are systematically investigated. The causes of the vertical growth are explained by surface processes under appropriate conditions for both polarities. Quantitative discussions of growth kinetics of GaN columns are an important feature in this work. The difficulties and the strategies of the MQW and p-GaN shell growth on high aspect ratio GaN columns are presented in detail.Books on Demand GmbH, Überseering 33, 22297 Hamburg 186 pp. Englisch. Nº de ref. del artículo: 9783736990005
Gastos de envío:
EUR 60,00
De Alemania a Estados Unidos de America
Destinos, gastos y plazos de envío
Cantidad disponible: 2 disponibles
Imagen del vendedor
Controlled Growth of GaN Columns and 3D Core-Shell LEDs by MOVPE
Impresión bajo demandaLibrería: AHA-BUCH GmbH, Einbeck, Alemania
Calificación del vendedor: 5 de 5 estrellas
Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - GaN three-dimensional columnar core-shell LEDs are considered to be one of the promising candidates for prospective solid state lighting. In comparison to conventional planar layer LEDs, columnar core-shell LEDs have many advantages. For instance, in a columnar GaN coreshell LED structure the InGaN/GaN MQW wraps around the column, therefore the light emitting area can be enormously increased. This is the main driving force behind the intense investigation of nanowire and micro-columnar LEDs. In addition, because of the increased area of the MQW, the internal quantum efficiency may be improved by a reduction of the local carrier density, mitigating the efficiency droop. Besides, due to the reduced influence of thermal and lattice mismatch between the substrate and columns, dislocation-free GaN column arrays can be achieved on large area substrates.The main contribution of the present work is the controlled growth of GaN columns and core-shell LEDs by metal-organic vapor-phase expitaxy. The growth conditions which lead to vertical growth of N-polar and Ga-polar GaN columns are systematically investigated. The causes of the vertical growth are explained by surface processes under appropriate conditions for both polarities. Quantitative discussions of growth kinetics of GaN columns are an important feature in this work. The difficulties and the strategies of the MQW and p-GaN shell growth on high aspect ratio GaN columns are presented in detail. Nº de ref. del artículo: 9783736990005
Gastos de envío:
EUR 61,25
De Alemania a Estados Unidos de America
Destinos, gastos y plazos de envío
Cantidad disponible: 1 disponibles
Imagen del vendedor
Controlled Growth of GaN Columns and 3D Core-Shell LEDs by MOVPE
Impresión bajo demandaLibrería: preigu, Osnabrück, Alemania
Calificación del vendedor: 5 de 5 estrellas
Taschenbuch. Condición: Neu. Controlled Growth of GaN Columns and 3D Core-Shell LEDs by MOVPE | Xue Wang | Taschenbuch | 186 S. | Englisch | 2015 | Cuvillier | EAN 9783736990005 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu Print on Demand. Nº de ref. del artículo: 104319456
Gastos de envío:
EUR 70,00
De Alemania a Estados Unidos de America
Destinos, gastos y plazos de envío
Cantidad disponible: 5 disponibles