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Sinopsis
A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques and device simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications.
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Acerca del autor
Jiandong Sun's research focuses on exploring terahertz detectors and sources based on low-dimensional plasma wave. In his Ph. D thesis, he developed high-sensitivity terahertz detectors based on the self-mixing effect in gate-controlled two-dimensional electron systems at room temperature. Terahertz antennas and Schottky gates are integrated with the two-dimensional electron gas for manipulating both the localized terahertz field and the field-effect electron channel. The underlying self-mixing properties are uncovered through the transport measurement and simulations. The device model and the characterization techniques he developed in the thesis could be applied for further detector optimization for future real applications. honors: 1) American Superconductor Corp (AMSC) Award (2012). 2) Nominated by Chinese Academy of Sciences for an outstanding Ph.D. thesis (2013) 3) Honor roll student of Chinese Academy of Sciences (2010) 4) Honor roll student of Chinese Academy of Sciences (2011) Publications: [1] J. D. Sun, Y. F. Sun, D. M. Wu, Y. Cai, H. Qin and B. S. Zhang. Highresponsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor, Appl. Phys. Lett. 100, 013506 (2012). [2] J. D. Sun, H. Qin, R. A. Lewis, Y. F. Sun, X. Y. Zhang, Y. Cai, D. M. Wu, and B. S. Zhang. Probing of localized terahertz self-mixing in a GaN/AlGaN field-effect transistor, Appl. Phys. Lett. 100, 173513 (2012). [3] Y. F. Sun, J. D. Sun, Y. Zhou, R. B. Tan, C. H. Zeng, W. Xue, H. Qin, B. S. Zhang, and D. M. Wu. Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas, Appl. Phys. Lett. 98, 252103 (2011). [4] J. D. Sun, Y. F. Sun, Y. Zhou, Z. P. Zhang, W. K. Lin, C. H. Zen, D. M. Wu, B. S. Zhang, H.Qin. A Terahertz detector Based on GaN/AlGaN High Electron Mobility Transistor with Bowtie, AIP Conf. Proc , 1399, 893 (2011); 30th International Conference on the Physics of Semiconductors (ICPS) 2010 [5] R. B. Tan, H. Qin, J. D. Sun, X. Y. Zhang, and B. S. Zhang. Modeling an antenna-coupled graphene field-effect terahertz detector. Appl. Phys. Lett. 103, 173507 (2013)
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A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques and device simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications.
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Hardcover. Condición: new. Hardcover. A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications. A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. Nº de ref. del artículo: 9783662486795
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Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques and device simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications. 144 pp. Englisch. Nº de ref. del artículo: 9783662486795
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