VLSI Technology: Fundamentals and Applications - Tapa blanda

Sinopsis

1. lntroduction.- 1.1 The Significance of Semiconductor Integrated Circuits.- 1.2 Prospects of High-Density Integration.- 1.3 Device Dimensions and Density of Integration.- 1.4 Outline of the Microfabrication Technology.- 2. Electron Beam Lithography.- 2.1 Background.- 2.1.1 History of the Machine Development.- 2.1.2 Classification of the Machines.- a) Electron-Beam Source.- b) Beam Shape.- c) Beam Scanning.- d) Sample Movement.- e) Samples.- 2.1.3 Factors Determining Pattern Accuracy.- a) Beam Diameter.- b) Aberrations in the Electron-Optics System.- c) Sample Movement, Beam-Position Control and Alignment.- d) Proximity Effect.- 2.1.4 Factors Determining the Drawing Speed.- 2.2 Components for Electron-Beam Lithography.- 2.2.1 Electron-Beam Source.- a) Fundamentals.- b) Lanthanum Hexaboride (LaB6) Cathode Electron Gun.- c) Field-Emission (FE) Electron Gun.- 2.2.2 Electron Optical Column.- a) Electromagnetic Lens.- b) Electrostatic Lens.- c) Demagnifying Electron-Optical Column.- d) Magnifying Electron-Optical Column.- 2.2.3 Electron-Beam Delineation.- a) Delineation of Spatially Separated Figures.- b) Delineation of Figures Over the Surface of a Large Work Piece.- 2.2.4 Alignment.- a) Alignment Mark Structure.- b) Mark Position Deciding Method.- c) Writing Position Compensation Method.- d) Comments.- 2.2.5 Radiation Damage.- 2.3 Software for Electron-Beam Lithography.- 2.3.1 Pattern Data Processing.- a) Input Files.- b) Fundamental Pattern Data Processing Operations.- c) Algorithms.- 2.3.2 Correction of Distortion.- 2.3.3 Correction of the Proximity Effect.- a) Fitting the EID Function.- b) Dosage Calculation and Representative Points.- c) Pattern-Shape Adjustment Techniques.- d) Dot-Beam Correction.- e) Simultaneous Correction Method.- 2.3.4 Warped-Wafer Correction.- a) Algorithm.- b) Cubic Interpolation Method.- 2.4 Wafer and Writing Systems.- 2.4.1 EB System with High Current FE Gun (VL-FI).- a) Electron Gun and the Electron-Optical System.- b) Mechanical System.- c) Electronic Control System.- d) Computer System and Software.- e) Experimental Results.- 2.4.2 Variable-Shaped-Beam Lithography (VL-S2).- a) VL-S2 System Configuration.- b) VL-S2 Electron-Optics System.- c) VL-S2 Stage System.- d) VL-S2 Data Transfer Control System.- e) VL-S2 Software System.- f) VL-S2 Pattern Exposure.- 2.4.3 Raster-Scan-Type Electron-Beam Delineator (VL-Rl, VL-R2).- a) VL-R1 Writing Scheme.- b) VL-R1 System Configuration.- c) VL-R1 Delineation Results.- d) VL-R2 Writing Scheme.- e) VL-R2 System Composition.- f) VL-R2 Delineation Results.- g) Conclusion on VL-R1 and VL-R2.- 3. Pattern Replication Technology.- 3.1 UV Replication Technologies.- 3.1.1 Reduction Stepper (VL-SR 2).- a) Imaging Optics.- b) Alignment Mechanism.- 3.1.2 1:1 Stepper (VL-SR 1).- a) Imaging Optics.- b) Alignment Mechanism.- 3.2 Deep-UV Projection System.- 3.2.1 Light Source.- 3.2.2 Alignment.- 3.2.3 Overall System.- 3.3 X-Ray Lithography.- 3.3.1 Problems of X-Ray Lithography.- a) Features.- b) Geometrical Distortions.- c) Wavelength Selection.- 3.3.2 X-Ray Source.- 3.3.3 X-Ray Masks.- a) Inorganic Materials.- b) Organic Materials.- 3.3.4 Alignment.- 3.3.5 Examples of Experimental Systems.- 3.4 Electron-Beam Projection.- 3.4.1 Demagnifying Electron Projection Method.- a) Design of an Electromagnetic Lens with a Large Pole-Piece Bore Diameter.- b) Alignment Procedures.- c) Self-Supporting Metal Foil Mask.- 3.4.2 Photocathode Pattern Transfer System.- a) Imaging System.- b) Photocathode Mask and Illumination Source.- c) Alignment System.- d) System Description.- 3.5 Radiation-Sensitive Resist for Microfabrication.- 3.5.1 Electron-Beam Resist.- a) Positive-Type Electron-Beam Resist.- b) Negative-Type Electron-Beam Resist.- c) Problems of Electron-Beam Resist.- 3.5.2 X-Ray Resist.- a) Positive-Type X-Ray Resist.- b) Negative-Type X-Ray Resist.- 3.5.3 The Future of Electron-Beam and X-Ray Resists.- 4. Mask Inspection Technology.- 4.1 Principles of Mask Inspection.- 4.1.1 Signal

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